Manufacturing method of semiconductor element

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as weak adhesion, failure of etching and trenching, easy peeling off of photoresist, etc., to achieve excellent results and prevent tin liquid spillover effect

Inactive Publication Date: 2019-08-16
YANGZHOU HY TECH DEV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the EPI chip itself will undergo a grinding and polishing process, so the surface of the chip itself is smooth, and the adhesion to the photoresist will be weak. Subsequent etch trenching failure

Method used

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  • Manufacturing method of semiconductor element
  • Manufacturing method of semiconductor element
  • Manufacturing method of semiconductor element

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0026] A method for processing a semiconductor element, comprising the steps of:

[0027] (1) Pre-etching step:

[0028] 1) Coating the upper and lower sides of the semiconductor chip with photoresist;

[0029] 2) Covering the photoresist layer with a mask with a discontinuous line segment pattern for exposure and development;

[0030] 3) Putting the semiconductor chip into a mixed acid for pre-etching, the mixed acid is composed as follows by mass ratio: nitric acid: hydrofluoric acid: sulfuric acid: glacial acetic acid=5:8:2.5:4.8, nitric acid, hydrofluoric acid, sulfuric acid , The concentration ratio of glacial acetic acid is 5:5:2:5; the etching thickness is 25 μm.

[0031] 4) After the etching is completed, remove the photoresist on the surface of the semiconductor chip, and dry the semiconductor chip; for the morphology after pre-etching, see figure 1 and figure 2 ;

[0032] (2) Conventional yellow light process steps:

[0033] The P-type surface and N-type surfa...

Embodiment 2

[0035] A method for processing a semiconductor element, comprising the steps of:

[0036] (1) Pre-etching step:

[0037] 1) Coating the upper and lower sides of the semiconductor chip with photoresist;

[0038] 2) Select a photomask with a strip-shaped closed ring pattern to cover the photoresist layer for exposure and development;

[0039] 3) Putting the semiconductor chip into a mixed acid for pre-etching, the mixed acid is composed as follows by mass ratio: nitric acid: hydrofluoric acid: sulfuric acid: glacial acetic acid=8:7:3:4, nitric acid, hydrofluoric acid, sulfuric acid , The concentration ratio of glacial acetic acid is 5:5:2:5; the etching thickness is 30 μm.

[0040] 4) After the etching is completed, remove the photoresist on the surface of the semiconductor chip, and dry the semiconductor chip; for the morphology after pre-etching, see image 3 ;

[0041] Other steps are with embodiment 1.

[0042] The semiconductor chip prepared by the method can effective...

Embodiment 3

[0044] A method for processing a semiconductor element, comprising the steps of:

[0045] (1) Pre-etching step:

[0046] 1) Coating the upper and lower sides of the semiconductor chip with photoresist;

[0047] 2) Select a photomask with a symmetrical triangle pattern to cover the photoresist layer for exposure and development;

[0048] 3) Putting the semiconductor chip into a mixed acid for pre-etching, the mixed acid is composed as follows by mass ratio: nitric acid: hydrofluoric acid: sulfuric acid: glacial acetic acid=8:8:3:5, nitric acid, hydrofluoric acid, sulfuric acid , The concentration ratio of glacial acetic acid is 5:5:2:5; the etching thickness is 35 μm.

[0049] 4) After the etching is completed, remove the photoresist on the surface of the semiconductor chip, and dry the semiconductor chip; for the morphology after pre-etching, see Figure 4 ;

[0050] Other steps are with embodiment 1.

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PUM

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Abstract

The invention provides a manufacturing method of a semiconductor element. The method comprises a pre-etching step and a conventional yellow light processing step. The pre-etching step is as follows that: (1) the upper and lower surfaces of a semiconductor wafer are coated with photoresists; (2) the photoresist layers are covered with photomasks with specific patterns for exposure and development;(3) the semiconductor wafer is put into mixed acid for pre-etching, wherein the mixed acid comprises the following components according to the mass ratio: nitric acid: hydrofluoric acid: sulfuric acid: glacial acetic acid=(4-10):(4-10):(2-5):(3-8); and (4) after etching is completed, the photoresists at the surfaces of the semiconductor wafer are removed, and the semiconductor wafer is dried. Themanufacturing method of the semiconductor element can effectively increase the adhesive force of the photoresist on the surface of the crystal grain and can avoid the tin overflow phenomenon in the subsequent assembly.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a processing method of a semiconductor element. Background technique [0002] In the semiconductor chip production process, one of the steps is the yellow light process, which determines the final pattern and size of the wafer. The photoresist process includes photoresist coating, exposure, development and etching. Photoresist is a chemical photosensitive material that exists in liquid form, and a good photoresist has good adhesion and corrosion resistance. First, apply a photoresist with an appropriate thickness on the N-type surface of the wafer, and perform the first soft bake. After taking it out, turn over the wafer surface and apply a photoresist with an appropriate thickness on the P-type surface, and perform the second soft bake. The second hard bake, the second bake is used to evaporate the solvent in the photoresist through temperature evaporation,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/027H01L21/67
CPCH01L21/0274H01L21/67075
Inventor 李珏蒨夏毅伦
Owner YANGZHOU HY TECH DEV
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