Ultrahigh-temperature high-entropy carbide powder and preparation method thereof
A carbide and ultra-high temperature technology, applied in the field of ultra-high temperature ceramic powder, can solve the problems of being unsuitable for large-scale production of ultra-high temperature and high entropy ceramic powder, and achieve the effects of low cost, wide source of raw materials and simple process
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0038] Raw material TiO 2 , ZrO 2 , HfO 2 , Nb 2 o 5 、WO 3 、 Ta 2 o 5 and carbon black in molar ratio TiO 2 ZrO 2 :HfO 2 :Nb 2 o 5 :WO 3 : Ta 2 o 5 :C=1:1:1:0.25:0.5:1:4 weighed, then placed in a zirconia mixing tank, added distilled water, mixed with zirconia balls at a speed of 100r / min for 48h, and then mixed evenly The raw materials were dried in a drying oven at a constant temperature of 80 °C for 72 h, and the dried raw material powder was put into a graphite crucible, heated to 1800 °C in a vacuum graphite furnace at a heating rate of 10 °C / min, kept for 2 h, and then The furnace is cooled to room temperature, and the powder obtained by grinding is an ultra-high temperature high-entropy carbide (Ti 0.2 Zr 0.2 f 0.2 Nb 0.1 W 0.1 Ta 0.2 ) C powder.
[0039] The X-ray diffraction spectrum of the prepared powder is as follows figure 1 As shown, it can be seen from the figure that the X-ray diffraction analysis shows that it is a pure ultra-high tempera...
Embodiment 2
[0041] Raw material TiO 2 , ZrO 2 , HfO 2 , Nb 2 o 5 、WO 3 、 Ta 2 o 5 and carbon black in molar ratio TiO 2 :ZrO 2 :HfO 2 :Nb 2 o 5 :WO 3 : Ta 2 o 5 : C=1.2:1.2:1.2:0.4:0.7:1.2:4.5 weighed, then placed in a zirconia mixing tank, added distilled water, mixed with zirconia balls at a speed of 150r / min for 36h, and then mixed evenly The raw material was dried in a drying oven at a constant temperature of 100°C for 64 hours, the dried raw material powder was put into a graphite crucible, heated to 1980°C in an argon graphite furnace at a heating rate of 15°C / min, and kept for 1 hour. With the furnace cooling to room temperature, the powder obtained by grinding is ultra-high temperature high-entropy carbide (Ti 0.2 Zr 0.2 f 0.2 Nb 0.1 W 0.1 Ta 0.2 ) C powder.
[0042] The transmission electron microscope image of the prepared powder is shown in figure 2 As shown, it can be seen from the figure that the transmission electron microscope analysis shows that it i...
Embodiment 3
[0044] Raw material TiO 2 , ZrO 2 , HfO 2 , Nb 2 o 5 、WO 3 、 Ta 2 o 5 and carbon black in molar ratio TiO 2 :ZrO 2 :HfO 2 :Nb 2 o 5 :WO 3 : Ta 2 o 5 : C=1.5:1.5:1.5:0.4:0.75:1.5:6 weighed, then placed in a zirconia mixing tank, added distilled water, mixed with zirconia balls at a speed of 120r / min for 40h, and then mixed evenly Dry the raw material in a drying oven at a constant temperature of 120°C for 24 hours, put the dried raw material powder into a graphite crucible, heat it to 1900°C at a heating rate of 15°C / min in an argon graphite furnace, and keep it for 1.5h , with the furnace cooling to room temperature, the powder obtained by grinding is ultra-high temperature high-entropy carbide (Ti 0.2 Zr 0.2 f 0.2 Nb 0.1 W 0.1 Ta 0.2 ) C powder.
[0045] The prepared powder was sintered at 2200 °C by discharge plasma to obtain ultra-high temperature and high entropy carbide ceramics (Ti 0.2 Zr 0.2 f 0.2 Nb 0.1 W 0.1 Ta 0.2 ) C bulk material, the rel...
PUM
Property | Measurement | Unit |
---|---|---|
particle diameter | aaaaa | aaaaa |
particle size | aaaaa | aaaaa |
Vickers hardness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com