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A flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer

A metal halide and light-emitting device technology, which is applied in the field of flexible red photoelectric injection light-emitting devices, can solve problems such as poor bending stability, achieve good band gap matching, excellent mechanical bending durability, and solve bending stability problems.

Inactive Publication Date: 2020-07-24
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to propose a flexible red optoelectronic device based on metal halide perovskite light-emitting layer, aiming at the problem of poor bending stability of flexible devices on the current organic metal halide perovskite (including PSC and Pe-LED). Injection light-emitting device, the flexible red photoelectric injection light-emitting device has excellent bending stability

Method used

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  • A flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer
  • A flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer
  • A flexible red photoelectric injection light-emitting device based on metal halide perovskite light-emitting layer

Examples

Experimental program
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Effect test

Embodiment 1

[0028] SnO 2 Preparation of sol-gel: weigh 2.79g SnCl 2 2H 2 O in 25mL of absolute ethanol, refluxed at 78°C for 3h, aged at 30°C for 3h, and then left at room temperature for 2d to obtain a light yellow sol, which is SnO 2 Sol.

[0029] Method of mixed perovskite precursors: The mixed perovskite precursors were prepared by a two-step method. A: First add 507.7mg PbI 2 , 80.7mg PbBr 2 , 172mg HC (NH 2 ) 2 I(FAI) and 22mg CH 3 NH 3 Br(MABr) was mixed with DMF (N,N dimethylformamide) and DMSO (dimethyl sulfoxide) (4:1, volume ratio) and dissolved in 1 mL of solvent. B: Dissolve 194.9 mg CsI in 500 uL DMSO. Both solutions were stirred at 60 °C for 1 h, and then Precursor B was added to Precursor A with a volume ratio of 1:19. The mixed precursor was stirred at 60 °C for 1 h.

[0030] Spiro-OMeTAD solution preparation method: Weigh 80mg of the hole transport material Spiro-OMeTAD (CuPc-DMP), 20uL Li-TFSI (520mg / 1mL acetonitrile), 30uLTBP, 20uL Co salt acetonitrile solu...

Embodiment 2

[0032] This embodiment discloses a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer, and its preparation steps are as follows:

[0033] The substrate is flexible and bendable PEN / ITO with a layer of ITO on the surface. Adopt the SnO that embodiment 1 prepares 2 Sol-gel, mixed perovskite precursor and Spiro-OMeTAD solution.

[0034] (1) Before preparing the electron transport layer, first tape the 2.5×2.5cm 2 The flexible and bendable PEN / ITO substrate with a layer of ITO on the surface is selectively covered, etched with zinc powder and 2M dilute hydrochloric acid, and then wiped off the residual zinc powder with cotton. Ultrasonic cleaning with detergent, ultrapure water, acetone, and ethanol for 30 min respectively. After the washed glass is blown dry, treat it with UV-ozone cleaning equipment for 60 minutes, and store it in a dust-free environment for later use.

[0035] (2) Preparation of amorphous disco...

Embodiment 3

[0041] This embodiment discloses a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer, and its preparation steps are as follows:

[0042] The substrate is flexible and bendable PEN / ITO with a layer of ITO on the surface. Adopt the SnO that embodiment 1 prepares 2 Sol-gel, mixed perovskite precursor and Spiro-OMeTAD solution.

[0043] (1) Before preparing the electron transport layer, first tape the 2.5×2.5cm 2 The flexible and bendable PEN / ITO substrate with a layer of ITO on the surface is selectively covered, etched with zinc powder and 2M dilute hydrochloric acid, and then wiped off the residual zinc powder with cotton. Ultrasonic cleaning with detergent, ultrapure water, acetone, and ethanol for 30 min respectively. After the washed glass is blown dry, treat it with UV-ozone cleaning equipment for 60 minutes, and store it in a dust-free environment for later use.

[0044] (2) Preparation of amorphous disco...

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Abstract

The invention provides a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer and a preparation method thereof. The flexible red photoelectric injection light-emitting device comprises an anode layer, a hole transport layer, a perovskite light-emitting layer, an electron transport layer and a flexible substrate which are arranged in order; the anode layer employs Au, the hole transport layer employs Spiro-OMeTAD, the perovskite light-emitting layer employs Cs0.05FA0.8075MA0.1425Pb(I0.85Br0.15)3 mixed perovskite film material, the electron transport layer employs an amorphous non-continuous electron transport material SnO2, and the flexible substrate employs ITO / PEN. The preparation method of the flexible red photoelectric injection light-emitting device based on the metal halide perovskite light-emitting layer is simple and practicable and low in cost, and the prepared flexible red photoelectric injection light-emitting device effectively solves the bending stability problem of a flexible perovskite device.

Description

technical field [0001] The invention relates to semiconductor material light-emitting technology, in particular to a flexible red photoelectric injection light-emitting device based on a metal halide perovskite light-emitting layer. Background technique [0002] Organometallic halide perovskites possess amazing optoelectronic properties and have attracted extensive attention in recent years for applications in solar cells and light-emitting diodes. Its unique properties include high-efficiency charge extraction capability, continuously adjustable optical bandgap, carrier diffusion length of 100-1000nm, exciton lifetime of 100ns, and low processing temperature and other excellent material properties. For perovskite solar cells (PSCs), certified conversion efficiencies (PCEs) have rapidly increased to over 23% in less than five years, a performance comparable to modern state-of-the-art single crystals that have been in development for more than 50 years. Silicon solar cells a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54H01L51/00H01L51/50H01L51/56
Inventor 边继明王敏焕刘洪珠冯昱霖董庆顺史彦涛
Owner DALIAN UNIV OF TECH
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