Terahertz detector and method based on N*M dielectric resonant antenna array

Abstract

The invention discloses a terahertz detector based on an N*M dielectric resonant antenna array. The N*M on-chip dielectric resonant terahertz antenna array is connected to a matching network, the matching network is connected to the source electrode of an NMOSFET, and the grid electrode of the NMOSFET is sequentially connected with a first bias resistor and first bias voltage. A third transmissionline is connected between the first bias resistor and the grid electrode. The drain electrode of the NMOSFET is connected to a first blocking capacitor. The other end of the first blocking capacitoris connected with a low noise pre-amplifier. A second bias resistor and a second bias voltage are connected between the first blocking capacitor and the low noise pre-amplifier. The low noise pre-amplifier is further provided with a voltage feedback loop. The invention also discloses a designing method of the N*M on-chip dielectric resonant terahertz antenna array. Compared with the prior art, loss of the on-chip terahertz antenna is effectively reduced and gain and radiation efficiency of the on-chip terahertz antenna are improved.

Description

technical field [0001] The invention relates to the technical field of terahertz, in particular to a terahertz detector and method based on an N×M dielectric resonant antenna array. Background technique [0002] THz radiation (T-ray) usually refers to electromagnetic waves with a frequency in the range of 0.1THz to 10THz (wavelength 30μm to 3mm), and its long-wave direction coincides with millimeter waves (submillimeter waves), and its short-wave direction coincides with infrared rays , so it belongs to the far-infrared band. [0003] Since THz waves are in a special position in the electromagnetic spectrum, they have many superior properties and are of great scientific significance. It is mainly manifested in the following aspects: First, the quantum energy and black body temperature are very low. Because the photon energy of terahertz wave is very low, it is not easy to ionize when it penetrates the material, so it can be used for safe and non-destructive testing. Secon...

AI Technical Summary

Problems solved by technology

[0004] At present, terahertz detection based on NMOSFET has been proved to be very feasible. However, due to the limitation of CMOS technology, the traditional on-chip dipole and patch terahertz antenna in the terahertz detector have a large loss, resulting in the traditional on-chip dipole The impedance matching bandwidth of terahertz antennas such as subs and patches is narrow, which greatly affects the detection sensitivity of terahertz detectors

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