Multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and preparation method thereof

Abstract

The invention discloses a multi-ridge type semiconductor laser capable of reducing inter-bridge crosstalk and a preparation method thereof. The multi-ridge type semiconductor laser comprises a substrate and an epitaxial structure including a lower limit layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limit layer and the like. The epitaxial structure includes a plurality of ridge portions; each ridge portion reaches the space below the active layer from the top of the epitaxial layer; and gaps among the ridge portions are filled with high-resistance low-thermal-conductivity low-refractive-index materials, so that active regions of all ridge portions are isolated mutually. And then ohmic contact electrodes are arranged at the upper parts of the ridge portions in a one-to-one correspondence manner and are provided with top electrodes for connection. With the multi-ridge type semiconductor laser, the mutual independence of electricity and light between the ridge portions is realized; and the thermal crosstalk among the ridges is reduced effectively. Therefore, a solution idea is provided for obtaining a high power laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a multi-ridge type semiconductor laser which reduces inter-ridge crosstalk and a preparation method thereof. Background technique [0002] Due to the advantages of high electro-optical conversion efficiency, good spectral purity, small size, and high reliability, semiconductor lasers have broad application prospects in military and civilian fields such as laser guidance, laser ranging, laser printing, and laser communication. Among them, GaN-based lasers of the hundred milliwatt level have been successfully applied to optical disc information storage technology. However, application fields such as laser display and underwater communication put forward higher requirements on the output power of GaN lasers. [0003] For a single laser tube, adopting a multi-ridge structure is a method to obtain high output power. Solving the thermal crosstalk between differe...

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Problems solved by technology

However, in the above structures, there is a large distance between the ridges. When the distance between the ridges is too large, the quality of the beam will be deteriorated, and the active regions of the ridges are connected to each other, and the thermal crosstalk is difficult to eliminate.

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