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Photochromic room temperature magnetic semiconductor material and preparation method thereof

A magnetic semiconductor and photochromic technology, which is applied in the direction of color-changing fluorescent materials, luminescent materials, and the magnetism of inorganic materials, to achieve the effects of fast photochromic rate, enhanced magnetic response, and simple and easy preparation methods

Active Publication Date: 2019-03-08
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

According to the literature survey, Bi with photoinduced magnetic properties 2 WO 6 not yet reported

Method used

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  • Photochromic room temperature magnetic semiconductor material and preparation method thereof
  • Photochromic room temperature magnetic semiconductor material and preparation method thereof
  • Photochromic room temperature magnetic semiconductor material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0049] A method for preparing a photochromic room temperature magnetic semiconductor material, the steps are as follows:

[0050] (1) Preparation of precursor solution

[0051] Add 0.5g of bismuth nitrate pentahydrate into 0.8mol / L nitric acid solution, stir until bismuth nitrate pentahydrate is completely dissolved, then add 0.18g of sodium tungstate, stir for about 10 minutes, then add 0.3g of polyethylene glycol;

[0052] (2) Hydrothermal reaction

[0053] Pour the mixed solution obtained in step (1) into a 50ml polytetrafluoroethylene reactor for hydrothermal reaction, the reaction conditions are: temperature: 180°C, reaction time: 6 hours. The reactor was taken out and cooled to room temperature naturally.

[0054] (3) Product post-processing

[0055] The hydrothermal reaction mixed solution obtained in step (2) was centrifuged and washed three times with deionized water at a centrifugal speed of 8000rmp; then, the product obtained by the centrifugation was dried in an...

Embodiment 2

[0059] A method for preparing a photochromic room temperature magnetic semiconductor material, the steps are as follows:

[0060] (1) Preparation of precursor solution

[0061] Add 0.5g of bismuth nitrate pentahydrate into 0.8mol / L nitric acid solution, stir until bismuth nitrate pentahydrate is completely dissolved, then add 0.18g of sodium tungstate, stir for about 10 minutes, then add 0.3g of polyethylene glycol;

[0062] (2) Hydrothermal reaction

[0063] Pour the mixed solution obtained in step (1) into a 50ml polytetrafluoroethylene reactor for hydrothermal reaction. The reaction conditions are: temperature: 180°C, reaction time: 10 hours, take out the reactor and naturally cool to room temperature.

[0064] (3) Product post-processing

[0065] The hydrothermal reaction mixed solution obtained in step (2) was centrifuged and washed three times with deionized water at a speed of 8000 rpm; then, the product obtained by the centrifugation was dried in an oven at 80 degree...

Embodiment 3

[0069] A method for preparing a photochromic room temperature magnetic semiconductor material, the steps are as follows:

[0070] (1) Preparation of precursor solution

[0071] Add 0.5g of bismuth nitrate pentahydrate into 0.8mol / L nitric acid solution, stir until bismuth nitrate pentahydrate is completely dissolved, then add 0.18g of sodium tungstate, stir for about 10 minutes, then add 0.3g of polyethylene glycol;

[0072] (2) Hydrothermal reaction

[0073] Pour the mixed solution obtained in step (1) into a 50ml polytetrafluoroethylene reactor for hydrothermal reaction, the reaction conditions are: temperature: 180°C, reaction time: 17 hours. The reactor was taken out and cooled to room temperature naturally.

[0074] (3) Product post-processing

[0075] The hydrothermal reaction mixed solution obtained in step (2) was centrifuged and washed three times with deionized water at a speed of 8000 rpm; then, the product obtained by the centrifugation was dried in an oven at 8...

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Abstract

The invention relates to a photochromic room temperature magnetic semiconductor material and a preparation method thereof. The semiconductor material adopts a Bi2WO6 semiconductor material, the morphology of the semiconductor material adopts a lamellar structure; the lamella thickness is 1 to 5nm. The semiconductor material is formed by regulating a bismuth source and tungstate through a high molecular surfactant in a hydrothermal condition. The semiconductor material has the advantages that the morphology of the semiconductor material adopts a lamellar structure, a lamella adopts an ultrathinnanosheet, and the lamellar structure is beneficial to transferring of illuminated electron between a Bi2O2 lamella and a WO6 lamella, so that spin magnetic moment is produced, and photoinduced magnetism is exhibited. The semiconductor material has photochromic performance at a room temperature, and is high in photochromic rate, and the color can be changed after 5 to 10min of irradiation.

Description

technical field [0001] The invention relates to a photochromic room-temperature magnetic semiconductor material and a preparation method thereof, belonging to the field of magnetic materials. Background technique [0002] Photochromism refers to the physical and chemical reaction of the material, which leads to the change of its optical absorption band, that is, the change of the color of the material. Photochromism covers organic, inorganic, polymer and biological fields. As an efficient and clean energy source, light can be regulated through a remote non-contact mode, and it is fast and precise, so it has attracted extensive attention from many researchers. Photochromic nanomaterials can be used as information storage elements, photochemical sensors, photochromic decoration and protective packaging materials, self-image holographic recording photography and anti-counterfeiting materials due to their unique light-induced reactions and superior photoresponse reversibility. ...

Claims

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Application Information

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IPC IPC(8): C09K9/00C09K11/74H01F1/40
CPCH01F1/40C09K9/00C09K11/7457
Inventor 王挺陈代荣焦秀玲魏菁
Owner SHANDONG UNIV
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