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Tin dioxide-zinc stannate core-shell nano-wires and preparation method

A technology of core-shell nanometer and tin dioxide, which is applied in the direction of chemical instruments and methods, nanotechnology, nanotechnology, etc., can solve the problems of unrealized core-shell nanowire, expensive operation of equipment, high maintenance cost, etc., and achieve low price, Clear core-shell structure and good crystal quality

Inactive Publication Date: 2019-02-26
SOUTHWEST JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Both tin dioxide and zinc stannate are N-type semiconductor oxide materials that are environmentally friendly and have a wide bandgap. They all have good photocatalytic properties; among them, zinc stannate also has a higher electron mobility (10-30cm 2 vs. -1 ) and low electron-hole recombination rate, and its chemical stability is excellent; currently, Xiguang Han et al. have realized SnO 2 / Zn 2 SnO 4 The preparation of hollow structure nanomaterials, while SnO 2 -Zn 2 SnO 4 Fabrication of core-shell nanowires has never been achieved
Generally, the equipment that can change the composition of reactants during the growth process includes metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD), molecular beam epitaxy (Molecular Beam Epitaxy, MBE) and atomic layer deposition (Atomic Layer Deposition, ALD). ), but these devices are not only expensive but also complicated to operate and high in maintenance costs

Method used

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  • Tin dioxide-zinc stannate core-shell nano-wires and preparation method
  • Tin dioxide-zinc stannate core-shell nano-wires and preparation method
  • Tin dioxide-zinc stannate core-shell nano-wires and preparation method

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preparation example Construction

[0029] A kind of SnO 2 -Zn 2 SnO 4 A method for preparing a core-shell nanowire, comprising the following steps:

[0030] Step 1: Incorporate the SnO 2 The powder and graphite powder are mixed at a molar ratio of 1:4 and ground evenly to obtain SnO 2 +C powder is placed in the high temperature zone of the chemical vapor deposition system; ZnO powder and graphite powder are mixed at a molar ratio of 1:1, and ground evenly to obtain ZnO+C powder, which is placed 30cm upstream of the center of the high temperature zone of the chemical vapor phase system.

[0031] Step 2: Select the C-face sapphire as the growth substrate, plate a 10nm-thick gold film on its surface by magnetron sputtering, and then place it in the low-temperature zone of the chemical vapor deposition system; feed in argon gas with a flow rate of 50sccm and oxygen gas with a flow rate of 5sscm, and keep The pressure is 1 Torr; the high temperature zone rises to 980°C, the low temperature zone rises to 918°C, a...

Embodiment

[0034] Follow the steps below to prepare SnO2 -Zn 2 SnO 4 Core-shell nanowires:

[0035] Step 1: Select the C-face sapphire as the growth substrate, and plate a 10nm thick gold film on its surface by magnetron sputtering technology, and then place it in the right half of the quartz tube with a length of 300mm and a diameter of 30mm;

[0036] High-purity SnO with a purity of 99.99% 2 The powder and graphite are mixed according to the molar ratio of 1:4, and ground evenly, and then the mixed powder is placed at the left end of the quartz tube;

[0037] Put the quartz tube with the substrate and the powder source into the reaction chamber of the chemical vapor deposition system, wherein the substrate is located in the center of the low temperature zone of the reaction chamber, and the powder source is located in the center of the high temperature zone of the reaction chamber;

[0038] Mix high-purity ZnO powder with a purity of 99.99% and graphite at a molar ratio of 1:1, grin...

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Abstract

The invention discloses tin dioxide-zinc stannate core-shell nano-wires and a preparation method. The preparation method comprises the following steps: first, mixing SnO2 powder and graphite powder inthe molar ratio of 1:4, grinding uniformly to obtain SnO2+C powder, mixing ZnO powder and graphite powder in the molar ratio of 1:1, and grinding uniformly to obtain ZnO+C powder; second, after a substrate is plated with a gold film, placing the substrate in a depositing area, heating to 918 DEG C, placing the SnO2+C powder in a vapour depositing system high-temperature area, heating to 980 DEG C, and growing SnO2 nano-wires on the substrate through vapour deposition; third, placing the ZnO+C powder in the vapour depositing system high-temperature area, growing a Zn2SnO4 shell layer on the substrate through the vapour deposition, and cooling to obtain a target product; the SnO2-Zn2SnO4 core-shell nano-wires has uniform core-shell structures and uniform contrast; the interfaces and the outer surfaces are smooth and flat, and have an extremely good epitaxial relationship; the preparation method is simple and is convenient to maintain.

Description

technical field [0001] The invention relates to the technical field of nanomaterial preparation, in particular to a tin dioxide-zinc stannate core-shell nanowire and a preparation method. Background technique [0002] With the rapid development of global industry and the deteriorating ecological environment, the research and development of materials that use solar energy to efficiently degrade organic dyes in industrial wastewater has become a current research hotspot; research on semiconductor oxide nanomaterials as photocatalysts has received more and more attention; current materials The main idea of ​​improving the photocatalytic performance is to improve the utilization efficiency of light energy and suppress the recombination of photogenerated carriers; core-shell heterostructure materials can achieve the above requirements with one blow, because the light can be reflected and refracted multiple times in the core-shell structure, Therefore, the light-harvesting ability...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J23/14C23C16/40C23C16/02B82Y30/00B82Y40/00
CPCC23C16/0281C23C16/407B82Y30/00B82Y40/00B01J23/002B01J23/14B01J35/396B01J35/39
Inventor 曹宝宝徐博家江松
Owner SOUTHWEST JIAOTONG UNIV
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