GaN-based laser and preparation method thereof

Abstract

The invention relates to a GaN-based laser and a preparation method thereof. The laser comprises an n-type limiting layer, an n-type waveguide layer, an active region, a p-type waveguide layer, a p-type limiting layer and a p-type contact layer which are stacked on the surface of a substrate, and is characterized by further comprising an n-type hole blocking layer which is located between the n-type waveguide layer and the active region, and a p-type electron blocking layer which is located between the p-type waveguide layer and the p-type limiting layer, wherein the p-type waveguide layer, the p-type electron blocking layer, the p-type limiting layer and the p-type contact layer form a ridge table structure. According to the laser, a high barrier is formed between the p-type waveguide layer and the limiting layer, so that electrons can be effectively prevented from leaking to the position, close to the p region, outside the active region; a high barrier is formed between the n-type waveguide layer and the active region, so that the holes are effectively prevented from leaking to the position, close to the n region, outside the active region, and therefore the threshold current ofthe GaN-based ultraviolet laser is reduced, and the power and the photoelectric conversion efficiency are improved.

Description

technical field [0001] The invention relates to the technical field of optoelectronic devices, in particular to a GaN-based laser and a preparation method thereof. Background technique [0002] As a third-generation semiconductor, gallium nitride (GaN) and its series of materials (including aluminum nitride, aluminum gallium nitride, indium gallium nitride, and indium nitride) are characterized by their large band gap and wide spectral range (covering from ultraviolet to Infrared full band), high temperature resistance and corrosion resistance, has great application value in the field of optoelectronics and microelectronics, so its luminous wavelength can cover the entire visible light spectrum, and has great adjustability; in addition, GaN-based lasers have the characteristics of high luminous efficiency, high thermal conductivity, and good chemical stability, and can be widely used in industrial processing, medical treatment, military and theoretical research. But so far,...

AI Technical Summary

Problems solved by technology

[0003] The laser drives electrons and holes to inject into the laser structure in the direction perpendicular to the junction plane by applying an external bias voltage. Most of the carriers entering the active region recombine and generate light, while the other part of the carriers is due to the near-ultraviolet laser structure. The medium quantum well is relatively shallow and leaks out of the quantum well, causing the loss of carriers, which leads to a decrease in laser performance

Images