A kind of artificial diamond sintered body preparation process

A synthetic diamond and diamond technology, used in metal processing equipment, transportation and packaging, coating and other directions, can solve the problems of single component, reduce the overall hardness and wear ratio of sintered body, and loss of sintered body hardness, and improve the production efficiency. , The effect of shortening the preparation time and convenient demoulding

Active Publication Date: 2021-01-05
ANHUI YAZHU DIAMOND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The sintering time of the above-mentioned patent is too short, the hardness of the sintered body is lost, no catalyst is added, the sintering temperature is higher, and the thickness of the silicon carbide film in the pretreatment is larger, which leads to a decrease in the content of diamond components in the sintered body and reduces the overall strength of the sintered body. Hardness and wear ratio; the ratio of sintering aids is not optimized, and the composition is single, which also affects the density of the sintered body

Method used

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  • A kind of artificial diamond sintered body preparation process

Examples

Experimental program
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Effect test

Embodiment 1

[0040] Embodiment 1: prepare diamond sintered compact according to the following method:

[0041] (1) Sieve the diamond micropowder into three specifications of 10 μm, 20 μm, and 40 μm. After mixing in a weight ratio of 1:2:1, place 6 g of diamond micropowder in 4M NaOH and 1M HCl solutions and boil for 10 minutes respectively. Wash with distilled water until neutral, dry for later use;

[0042] (2) Mix gaseous methane silicon with a purity of 99.5% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 300Pa, and the deposition reaction temperature is 600°C. The deposition time is 1h, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 0.5-5 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy in the diamond-coated micropow...

Embodiment 2

[0047] Embodiment 2: prepare diamond sintered compact according to the following method:

[0048] (1) Sieve the diamond micropowder into three specifications of 20 μm, 30 μm, and 40 μm. After mixing according to the weight ratio of 1:2:1, place 8 g of diamond micropowder in sequence in 4M NaOH and 1M HCl solutions and boil for 20 minutes respectively. Wash with distilled water until neutral, dry for later use;

[0049] (2) Mix gaseous methane silicon with a purity of 99.99% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 600Pa, and the deposition reaction temperature is 800°C. The deposition time is 5 hours, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 10-25 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy ...

Embodiment 3

[0054] Embodiment 3: prepare diamond sintered compact according to the following method:

[0055] (1) Sieve the diamond micropowder into three specifications of 10 μm, 20 μm, and 30 μm, mix them according to the weight ratio of 1:2:1, place 5 g of diamond micropowder in 4M NaOH and 1M HCl solutions and boil them for 15 minutes respectively, Wash with distilled water until neutral, dry for later use;

[0056] (2) Mix gaseous methane silicon with a purity of 99.7% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 450Pa, and the deposition reaction temperature is 700°C. The deposition time is 3 hours, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 5-10 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy in the diamon...

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Abstract

The invention discloses a preparation process of an artificial diamond sintered body, which comprises the steps of screening and proportioning purification of diamond micropowder, deposition of a germanium-silicon alloy film, proportioning of a binder, ionization plasma sintering and the like. Effectively reduce the high temperature and high pressure requirements in the existing preparation technology, shorten the preparation time, improve the preparation efficiency of artificial diamond sintered bodies, reduce preparation energy consumption, greatly increase the hardness and wear ratio of sintered products, and improve product quality.

Description

technical field [0001] The invention relates to the preparation of a diamond sintered body, in particular to a preparation process of an artificial diamond sintered body. Background technique [0002] Synthetic diamond sintered body (referred to as PCD) is another important achievement after the successful development and application of synthetic diamond. Since the synthetic diamond sintered body not only has the characteristics of high thermal conductivity, high hardness, and high wear resistance inherent in diamond, but also has the characteristics that diamond single crystals do not have, such as isotropy, high toughness, and high oxidation resistance. It was quickly applied in cutting tools, drilling, wire drawing, dressing tools, and wear-resistant devices. Depending on the purpose, there are triangles, cylinders, flakes, cones, and tapered shapes. [0003] In the growth mechanism of general PCD, it can be roughly divided into three types: growth type, sintering type,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F1/00B22F1/02B22F3/105C22C26/00
CPCB22F1/0003C22C26/00B22F3/105B22F2003/1051B22F2998/10C22C2026/008B22F1/17B22F9/04
Inventor 侯大伟
Owner ANHUI YAZHU DIAMOND
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