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Preparation process for artificial diamond sintered body

A kind of synthetic diamond and diamond technology, applied in metal processing equipment, coating, transportation and packaging, etc., can solve the problems of single component, reduce the overall hardness and wear ratio of sintered body, and the loss of sintered body hardness, so as to improve the production efficiency , shorten the preparation time, and facilitate demoulding

Active Publication Date: 2019-02-12
ANHUI YAZHU DIAMOND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] The sintering time of the above-mentioned patent is too short, the hardness of the sintered body is lost, no catalyst is added, the sintering temperature is higher, and the thickness of the silicon carbide film in the pretreatment is larger, which leads to a decrease in the content of diamond components in the sintered body and reduces the overall strength of the sintered body. Hardness and wear ratio; the ratio of sintering aids is not optimized, and the composition is single, which also affects the density of the sintered body

Method used

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  • Preparation process for artificial diamond sintered body

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Experimental program
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Effect test

Embodiment 1

[0040] Embodiment 1: prepare diamond sintered compact according to the following method:

[0041] (1) Sieve the diamond micropowder into three specifications of 10 μm, 20 μm, and 40 μm. After mixing in a weight ratio of 1:2:1, place 6 g of diamond micropowder in 4M NaOH and 1M HCl solutions and boil for 10 minutes respectively. Wash with distilled water until neutral, dry for later use;

[0042] (2) Mix gaseous methane silicon with a purity of 99.5% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 300Pa, and the deposition reaction temperature is 600°C. The deposition time is 1h, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 0.5-5 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy in the diamond-coated micropow...

Embodiment 2

[0047] Embodiment 2: prepare diamond sintered compact according to the following method:

[0048] (1) Sieve the diamond micropowder into three specifications of 20 μm, 30 μm, and 40 μm. After mixing according to the weight ratio of 1:2:1, place 8 g of diamond micropowder in sequence in 4M NaOH and 1M HCl solutions and boil for 20 minutes respectively. Wash with distilled water until neutral, dry for later use;

[0049] (2) Mix gaseous methane silicon with a purity of 99.99% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 600Pa, and the deposition reaction temperature is 800°C. The deposition time is 5 hours, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 10-25 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy ...

Embodiment 3

[0054] Embodiment 3: prepare diamond sintered compact according to the following method:

[0055] (1) Sieve the diamond micropowder into three specifications of 10 μm, 20 μm, and 30 μm, mix them according to the weight ratio of 1:2:1, place 5 g of diamond micropowder in 4M NaOH and 1M HCl solutions and boil them for 15 minutes respectively, Wash with distilled water until neutral, dry for later use;

[0056] (2) Mix gaseous methane silicon with a purity of 99.7% and germane at a molar ratio of 19:1 at room temperature, and fill it into a chemical vapor deposition equipment with a vacuum of 10Pa, so that the deposition pressure is 450Pa, and the deposition reaction temperature is 700°C. The deposition time is 3 hours, and the chemical vapor deposition is carried out on the surface of the artificial diamond powder to form a Ge layer with a thickness of 5-10 nanometers. 0.05 Si 0.95 The germanium-silicon alloy film, the mass fraction of the germanium-silicon alloy in the diamon...

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Abstract

The invention discloses a preparation process for an artificial diamond sintered body. The preparation process comprises the steps of screening, proportioning and purifying of diamond micro-powder, germanium-silicon alloy film deposition, bonding agent proportioning, ionized plasma sintering and the like. The high-temperature and high-pressure requirements in an existing preparation technology areeffectively reduced, the preparation duration is shortened, the preparation efficiency of the artificial diamond sintered body is improved, the preparation energy consumption is reduced, the hardnessand the abrasiveness ratio of the sintered product are greatly improved, and the product quality is improved.

Description

technical field [0001] The invention relates to the preparation of a diamond sintered body, in particular to a preparation process of an artificial diamond sintered body. Background technique [0002] Synthetic diamond sintered body (referred to as PCD) is another important achievement after the successful development and application of synthetic diamond. Since the synthetic diamond sintered body not only has the characteristics of high thermal conductivity, high hardness, and high wear resistance inherent in diamond, but also has the characteristics that diamond single crystals do not have, such as isotropy, high toughness, and high oxidation resistance. It was quickly applied in cutting tools, drilling, wire drawing, dressing tools, and wear-resistant devices. Depending on the purpose, there are triangles, cylinders, flakes, cones, and tapered shapes. [0003] In the growth mechanism of general PCD, it can be roughly divided into three types: growth type, sintering type,...

Claims

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Application Information

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IPC IPC(8): B22F1/00B22F1/02B22F3/105C22C26/00
CPCB22F1/0003C22C26/00B22F3/105B22F2003/1051B22F2998/10C22C2026/008B22F1/17B22F9/04
Inventor 侯大伟
Owner ANHUI YAZHU DIAMOND
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