A packaging process for LED flip chip
A flip-chip and packaging technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as the impact of LED chip performance, and achieve the effect of improving photoelectric conversion efficiency, good curing effect, and reducing production costs.
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Embodiment 1
[0039] A packaging process for LED flip chips, comprising the steps of:
[0040] (1) Metal bumps for flip-chip bonding are respectively provided on the N electrode and the P electrode of the LED flip chip;
[0041] (2) A chip substrate is provided, and metal bosses for connecting the positive and negative electrodes of the external circuit are arranged on the chip substrate;
[0042] (3) The metal bumps on the N electrode and the metal bumps on the N electrode are respectively connected to the corresponding metal bumps on the substrate for eutectic connection;
[0043] (4) Cover and solidify the LED flip chip on the chip substrate with fluorescent glue to obtain a packaged LED flip chip;
[0044] In the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 140° C., 6 minutes; the second-stage curing: the curing temperature is 120° C., 3 hours; the third-stage curing: 100° C., 60 minutes.
[0045] In the step (4), the fluorescent gl...
Embodiment 2
[0063] The difference between this embodiment and the above-mentioned embodiment 1 is: in the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 145°C, 5.5min; the second-stage curing: the curing temperature is 125°C , 2.5h; Tertiary curing 105 ℃, 55min.
[0064] In the step (4), the fluorescent glue is composed of 78 parts by weight of silica gel, 18 parts by weight of fluorescent powder, 0.8 parts by weight of a diffusing agent and 0.9 parts by weight of a coupling agent.
[0065] The phosphor is made of (BaCaMg) 10 (PO 4 ) 6 Cl 2 :Eu 2 +Phosphor powder, CeMgAl 11 o 19 : Ce 3 +,Tb 3 +Phosphor and (SrMg) 3 (PO 4 ) 2 : A mixture of Sn phosphors in a weight ratio of 5:1.2:1.
[0066] The diffusing agent is a mixture of perovskite quantum dots, nano silicon dioxide and nano barium sulfate in a weight ratio of 2.5:0.8:1.
[0067] The coupling agent is a mixture of vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris...
Embodiment 3
[0071] The difference between this embodiment and the above-mentioned embodiment 1 is that: in the step (4), the curing adopts three-stage curing, the first-stage curing: the curing temperature is 150°C, 5min; the second-stage curing: the curing temperature is 130°C, 2h; tertiary curing 110°C, 50min.
[0072] In the step (4), the fluorescent glue is composed of 80 parts by weight of silica gel, 20 parts by weight of fluorescent powder, 1 part by weight of a diffusing agent and 1 part by weight of a coupling agent.
[0073] The phosphor is made of (BaCaMg) 10 (PO 4 ) 6 Cl 2 :Eu 2 +Phosphor powder, CeMgAl 11 o 19 : Ce 3 +,Tb 3 +Phosphor and (SrMg) 3 (PO 4 ) 2 : A mixture of Sn phosphors in a weight ratio of 3:1.5:1.
[0074] The diffusing agent is a mixture of perovskite quantum dots, nano silicon dioxide and nano barium sulfate in a weight ratio of 2-4:0.5-1.5:1.
[0075] The coupling agent is a mixture of vinyltriethoxysilane, vinyltrimethoxysilane and vinyltris(β...
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