A GaN based wide swing linearize device and a manufacturing method thereof

A manufacturing method and gallium nitride-based technology, applied in the field of radio frequency, can solve problems such as high cost and complex circuit, and achieve the effect of low cost, simple device structure and widening range

Active Publication Date: 2019-01-18
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

RF predistortion and feedforward are common methods to improve linearity, but these methods require additional control circuits and signal processing devices, resulting in more complex circuits and higher costs

Method used

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  • A GaN based wide swing linearize device and a manufacturing method thereof
  • A GaN based wide swing linearize device and a manufacturing method thereof
  • A GaN based wide swing linearize device and a manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] See figure 1 , figure 1 The flow chart of the fabrication method of the GaN-based wide-swing linearization device provided for the embodiment of the present invention, the AlGaN / GaN high electron mobility transistor includes the first substrate layer 101, the nucleation layer 102, the GaN buffer layer 103 and the AlGaN Fabricated on a sample of the barrier layer 104, see Figure 2a , wherein a two-dimensional electron gas (Two dimensional electrons, 2DEG) exists between the buffer layer 103 and the barrier layer 104 . First, clean the sample. The cleaning steps are as follows: place the sample in acetone for 2 minutes, and then boil it in a positive glue stripping solution heated in a water bath at 60°C for 10 minutes. After washing off residual acetone and ethanol with deionized water, use HF solution (HF: H 2 O=1:5) Clean the sample for 30s, and finally clean it with deionized water and dry it with ultra-pure nitrogen.

[0045] After cleaning, a PIN diode fabricat...

Embodiment 2

[0081] See Figure 3a-Figure 3f , Figure 3a-Figure 3f It is a schematic diagram of the manufacturing method of the PIN diode provided by the embodiment of the present invention.

[0082] According to the measured input impedance of the AlGaN / GaN HEMT device, the output impedance of the PIN diode is Z d = r 1 +jxΩ, the junction capacitance of the PIN diode can be calculated from the output impedance. From the junction capacitance, it is known that the size and doping concentration of the PIN diode affect its size, thereby affecting the output impedance of the PIN diode. Therefore, by controlling the size and doping concentration of the PIN diode impurity concentration to make PIN diodes.

[0083] The preparation steps of the PIN diode are as follows:

[0084] S31. In the PIN diode fabrication region 105, epitaxially N+ layer material, I layer material, and P+ layer material in sequence to form N+ layer 301, I layer 302, and P+ layer 303 in sequence; please refer to Figur...

Embodiment 3

[0108] See Figure 4a-Figure 4b , Figure 4a-Figure 4b The schematic diagram of the interconnection method of the wide-swing linearization device provided by the embodiment of the present invention, the specific steps are as follows:

[0109] S41. Photolithographically etch the opening area of ​​the interconnection layer on the first protection layer 207 and the second protection layer 307, and etch the first protection layer 207, the dielectric layer 204 and the second protection layer in the opening area of ​​the interconnection layer layer 307, forming an open cell structure 501; see Figure 4a ,Specific steps are as follows:

[0110]S411. Lithographically etched the opening area of ​​the metal interconnection layer in the first protective layer 207 and the second protective layer 307: first, put the sample on a hot plate at 200° C. and bake for 5 minutes; On the protective layer 307, the photoresist is glued and glued, and the speed of glue spinning is 3500r / min, and th...

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Abstract

The invention relates to a manufacturing method of a GaN-based wide swing linearized device, which comprises the following steps: etching an AlGaN barrier layer to form a PIN diode manufacturing region on a GaN buffer layer; etching the AlGaN barrier layer to form a PIN diode manufacturing region on the GaN buffer layer; AlGaN/GaN HEMT devices were fabricated on the etched AlGaN barrier layer. Theinput impedance of AlGaN/GaN HEMT devices was measured. A PIN diode is fabricated in the PIN diode fabrication area, so that the output impedance and the input impedance of the PIN diode are conjugated matched; Wide swing linearized devices were fabricated on PIN diodes and AlGaN/GaN HEMT devices. As that PIN diode is adde in front of the power amplify, the wide swing of the circuit can be realized and the linearity of the power amplify can be improved.

Description

technical field [0001] The invention belongs to the field of radio frequency technology, and in particular relates to a gallium nitride-based wide-swing linearization device and a manufacturing method. Background technique [0002] Wireless communication has developed rapidly in the 21st century. Limited spectrum resources need to carry higher and higher data traffic, and 5G communication requires higher transmission rates. The design and work of wireless communication systems will be under tremendous pressure. The power amplifier is one of the key components of the transmission front-end of modern wireless communication, electronic countermeasures, radar and other electronic systems, and plays a very important role in the transmission system. High Electron Mobility Transistor (HEMT) based on AlGaN / GaN heterojunction has very good application prospects in high-temperature devices and high-power microwave devices, and is very suitable for microwave integrated circuits such as...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/8252H01L27/06
CPCH01L21/8252H01L27/0629
Inventor 马晓华杨凌王瑞泽郝跃周小伟祝杰杰侯斌宓珉翰
Owner XIDIAN UNIV
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