Metal gallium oxide doping transparent conductive membrane used for ultraviolet waveband and preparation method thereof

A transparent conductive film, ultraviolet band technology, applied to conductive layers on insulating carriers, metal material coating processes, circuits, etc., can solve problems such as low conductivity and poor contact characteristics, and achieve simple preparation methods, reduced resistance, The effect of increasing the difficulty of the process

Active Publication Date: 2019-01-04
ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In order to overcome the current Ga 2 o 3 The thin film has poor contact characteristics in the ultraviolet band and low conductivity. The present invention provides a new type of metal-doped gallium oxide transparent conductive thin film and its preparation method, which improves its transmittance in the ultraviolet band while reducing the sheet resistance of the thin film and improving its performance. Contact characteristics with epitaxial materials, the sheet resistance of the film is lower than 20Ω / sq, and the transmittance of the film above 330nm in the ultraviolet band is greater than 90%.

Method used

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  • Metal gallium oxide doping transparent conductive membrane used for ultraviolet waveband and preparation method thereof
  • Metal gallium oxide doping transparent conductive membrane used for ultraviolet waveband and preparation method thereof
  • Metal gallium oxide doping transparent conductive membrane used for ultraviolet waveband and preparation method thereof

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Embodiment 1

[0034] figure 1 Be a kind of novel metal doping Ga of specific embodiment 2 o 3 Schematic diagram of the cross-section of the film before high-temperature annealing; figure 1 As shown, a method for preparing a metal-doped gallium oxide transparent conductive film for ultraviolet bands comprises the following steps:

[0035] 1) On the substrate 1 cleaned by sulfuric acid, hydrogen peroxide and ammonia respectively in a 60°C water bath, the contact layer film 2 was conventionally grown by electron beams. The contact layer film 2 was made of ITO with a thickness of 10nm. Annealed under atmosphere for 1 min.

[0036] 2) Use magnetron sputtering with 140W power, substrate speed 20rmp, and 5mtorr argon gas to grow the first layer of Ga by sputtering 2 o 3 For the thin film 31, the sputtering time is preferably 10 minutes, and the thickness is 15 nm.

[0037] 3) Using magnetron sputtering with a power of 100W, a substrate speed of 20rmp, and argon gas of 5mtorr to grow the dope...

Embodiment 2

[0048] A method for preparing a metal-doped gallium oxide transparent conductive film for ultraviolet band, comprising the steps of:

[0049] 1) On the substrate 1 cleaned by sulfuric acid, hydrogen peroxide and ammonia respectively in a 60°C water bath, the contact layer film 2 was conventionally grown by electron beams. The contact layer film 2 was made of Ni with a thickness of 4nm. Annealed under atmosphere for 1 min.

[0050] 2) Use magnetron sputtering with 140W power, substrate speed 20rmp, and 5mtorr argon gas to grow the first layer of Ga by sputtering 2 o 3 For the thin film 31, the sputtering time is preferably 10 minutes, and the thickness is 15 nm.

[0051] 3) Using magnetron sputtering with a power of 100W, a substrate speed of 20rmp, and argon gas of 5mtorr to grow the doped film 4 by sputtering, the doped film 4 is an Ag film with a thickness of 7nm;

[0052] 4) Use magnetron sputtering with 140W power, substrate speed 20rmp, and 5mtorr argon gas to grow the...

Embodiment 3

[0056] A method for preparing a metal-doped gallium oxide transparent conductive film for ultraviolet band, comprising the steps of:

[0057] 1) On the substrate 1 cleaned by sulfuric acid, hydrogen peroxide and ammonia respectively in a 60°C water bath, the contact layer film 2 was conventionally grown by electron beams. The contact layer film 2 was made of ITO with a thickness of 10nm. Annealed under atmosphere for 1 min.

[0058] 2) Use magnetron sputtering with 140W power, substrate speed 20rmp, and 5mtorr argon gas to grow the first layer of Ga by sputtering 2 o 3 For the thin film 31, the sputtering time is preferably 10 minutes, and the thickness is 10 nm.

[0059] 3) Using magnetron sputtering with a power of 100W, a substrate speed of 20rmp, and argon gas of 5mtorr to grow the doped film 4 by sputtering, the doped film 4 is an Ag film with a thickness of 7nm;

[0060] 4) Use magnetron sputtering with 140W power, substrate speed 20rmp, and 5mtorr argon gas to grow t...

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Abstract

The invention discloses a metal gallium oxide doping transparent conductive membrane used for ultraviolet waveband and a preparation method thereof. The method comprises the steps that a layer of contact layer membrane firstly grows on a substrate, and annealing is conducted at the nitrogen-oxygen atmosphere of 400 DEG C-600 DEG C by a rapid thermal annealing furnace after the contact layer membrane grows; a first Ga2O3 membrane layer grows through sputtering under the condition of magnetic controlled argon sputtering; a doped membrane grows through sputtering under the condition of magnetic controlled argon sputtering; a second Ga2O3 membrane layer grows through sputtering under the condition of magnetic controlled argon sputtering, and annealing is conducted on completely growing membranes integrally at the nitrogen-oxygen atmosphere of 500 DEG C-600 DEG C by the rapid thermal annealing furnace, and membrane materials mutually penetrate, disperse and melt to form the metal doped Ga2O3 membrane. The transparent conductive membrane has higher membrane optical permeability and lower membrane square resistance on the basis of an ITO transparent conductive membrane.

Description

technical field [0001] The invention relates to a conductive film with high transmittance in the ultraviolet band, in particular to a metal-doped gallium oxide transparent conductive film used in the ultraviolet band and a preparation method thereof; the conductive film is a gallium oxide transparent conductive film with metal doping technology. Background technique [0002] In the preparation process of optoelectronic devices, in order to form a good ohmic contact with the epitaxial wafer and reduce the absorption of the emitting light source, it is very important to prepare a transparent conductive film with low contact resistance and high optical transmittance. The band gap of ITO is between 3.5eV and 4.3eV. There are mature processes in the preparation of blue and green LEDs, but there is serious light absorption in the ultraviolet band. The better the film, the more it absorbs violet light. Therefore, it is of great significance to find a thin film that can replace ITO ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/02C23C14/08C23C14/14C23C14/58H01L33/42
CPCH01L33/42C23C14/024C23C14/025C23C14/08C23C14/14C23C14/35C23C14/5806H01L33/32H01L2933/0016C23C28/00C23C14/5846C23C14/086C23C28/30C23C28/32C23C28/322C23C28/345H01B5/14
Inventor 王洪文如莲胡晓龙周泉斌
Owner ZHONGSHAN INST OF MODERN IND TECH SOUTH CHINA UNIV OF TECH
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