Efficient silicon carbide wafer machining method

Abstract

The invention belongs to the technical field of semiconductor material machining and particularly relates to an efficient silicon carbide wafer machining method. The machining method includes wafer chamfering, double-face mechanical lapping, grinding wheel polishing and double-face chemical mechanical polishing. By means of the efficient silicon carbide wafer machining method, diamond grinding wheel polishing is linked with double-face mechanical lapping and double-face chemical mechanical polishing, a waxed wafer attaching procedure in a traditional single-face machining method is abandoned,the machining technology process is greatly optimized, meanwhile, the automation degree and precision of wafer machining are improved, and silicon carbide wafers low in warping degree and high in surface quality are obtained. By means of the efficient silicon carbide wafer machining method, the wafer machining process is greatly simplified, the machining efficiency is improved, and commercializedlarge-scale production is facilitated.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material processing, and relates to an efficient silicon carbide wafer processing method, which improves the processing quality and processing efficiency of the silicon carbide wafer, is beneficial to saving production and processing costs, and is suitable for industrialization promotion. Background technique [0002] With the rapid development of information technology today, the innovation of semiconductor technology plays an increasingly important role. Wide bandgap semiconductors represented by silicon carbide and gallium nitride are the third generation of wide bandgap semiconductors after silicon and gallium arsenide. Compared with traditional semiconductor materials represented by silicon and gallium arsenide, silicon carbide has great advantages in terms of operating temperature, breakdown voltage and radiation resistance. Silicon carbide has become the most mature wide-bandgap semi...

AI Technical Summary

Problems solved by technology

The Mohs hardness of silicon carbide is 9.5, which is close to that of diamond, so the processing of silicon carbide materials is very difficult

In view of the high hardness and brittleness of silicon carbide materials, the processing efficiency of silicon carbide is generally low at present, and the processing cycle is long, which affects the large-scale production of silicon carbide materials

At present, the products sold on the market are double-sided polished products. The traditional silicon carbide processing technology is single-sided processing, including wafer chamfering, double-sided mechanical grinding, wax patch, rough mechanical polishing, fine mechanical polishing, wafer flipping, Rough mechanical polishing, fine mechanical polishing, chemical mechanical polishing, single-sided processing, thick re-waxing and patch flipping process are complicated, and the processing cycle is long, which is not conducive to the commercial mass production of silicon carbide wafers; simultaneous processing Wafer warp (Warp) and total thickness variation (TTV) are large, which reduces the product quality of downstream epitaxy and device manufacturing

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