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Preparation method of porous graphene/transition metal chalcogenide film

A technology of chalcogenides and transition metals, which is applied in the field of preparation of porous graphene/transition metal chalcogenides thin films, can solve the problems of fragile structure, poor physical properties, and reduced electrochemical stability of materials, so as to achieve rate performance Improvement, good electrochemical stability, stable and efficient utilization effect

Active Publication Date: 2020-07-31
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And the film (CN104609410A) that utilizes pore-forming substances to prepare uniform distribution of pores, although this method can be realized, requires relatively high control requirements for the reaction conditions required to remove pore-forming substances, and is not suitable for large-scale production
At the same time, such materials still have shortcomings, such as fragile structures and poor physical properties, which will greatly reduce the electrochemical stability of materials in flexible devices.

Method used

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  • Preparation method of porous graphene/transition metal chalcogenide film
  • Preparation method of porous graphene/transition metal chalcogenide film
  • Preparation method of porous graphene/transition metal chalcogenide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Example 1 Preparation of MoS by ion intercalation method 2 Dispersion, MoS 2 / Preparation of graphene (1:1) porous film electrodes

[0022] Preparation of MoS by lithium ion intercalation method 2 Dispersions. Weigh 500mgMoS 2 Disperse in 100 mL of cyclohexane, and raise the mixed solution to 80° C. under a nitrogen atmosphere. At this point, 10 mL of butyllithium was added and reacted at 90° C. for three days. The powder obtained by suction filtration after cooling was placed in ultrapure water for 90 minutes and subjected to centrifugation for 3 times to obtain MoS 2 Dispersions.

[0023] MoS 2 Dispersion and 5mg mL -1 The graphene dispersion was mixed uniformly at a mass ratio of 1:1, ultrasonicated in a water bath for 30 minutes, and the amount of residual moisture was controlled to 10% by vacuum filtration, and a preliminary sample was obtained in combination with a freeze-drying method. The sample was placed in the center of the tube furnace, and the temp...

Embodiment 2

[0025] Example 2 Preparation of MoS by Ultrasonic Degradation 2 Dispersion, MoS 2 / Preparation of graphene (1:1) porous film electrodes

[0026] Preparation of MoS by Ultrasonic Degradation 2 Dispersions. Weigh 500mgMoS 2 Disperse in 50ml of N,N-dimethylformamide solution, and disperse the mixture by tip ultrasonic method. After ultrasonication, the mixture was left to stand for 24 hours, then the upper layer was taken and centrifuged three times with a centrifuge to obtain MoS 2 Dispersions.

[0027] MoS 2 Dispersion and 5mg mL -1 The graphene dispersion was mixed evenly at a mass ratio of 1:1, ultrasonicated in a water bath for 30 minutes, and a preliminary sample was obtained by vacuum filtration combined with freeze-drying. The sample was placed in the center of the tube furnace, and the temperature was raised to 400°C for 1 hour in a mixed atmosphere of high-purity argon and hydrogen to prepare porous graphene / MoS 2 Film (Sample 2).

[0028] The preparation proc...

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Abstract

The invention discloses a method for preparing a porous graphene / transition metal chalcogen compound thin film. In the method, the transition metal chalcogenide dispersion liquid of the pseudocapacitance material is mixed with the graphene dispersion liquid, vacuum filtered to obtain a film with a water content of 10% to 20%, and after being freeze-dried, it is calcined at 300-800°C. A porous graphene / transition metal chalcogenide thin film is obtained. The invention uses single-layer or few-layer metal sulfide as a pseudocapacitive material loaded on the graphene surface to modify the electronic structure and chemical environment of the graphene surface, and prepares a porous film by combining vacuum filtration and freeze-drying. The film of the present invention has a stable pore structure and high utilization rate of active materials, exhibits good electrochemical stability, and its rate performance is significantly improved, and the scan rate is increased from 10 to 200mV s ‑1 , The capacity retention rate was 89%.

Description

technical field [0001] The invention belongs to the technical field of flexible supercapacitors, and relates to a method for preparing a porous graphene / transition metal chalcogenide thin film. Background technique [0002] As a new type of energy storage device, supercapacitors can provide high power and long life, and have broad application prospects in fields such as hybrid electric vehicles and emergency power supplies. In particular, flexible devices are increasingly used in daily life. However, its low energy density severely restricts its application. Specific capacity as a key factor to improve the energy density of flexible supercapacitors. To improve the performance of electrode materials, pseudocapacitive materials with high stability and high activity are required. [0003] At present, the methods for preparing graphene porous membranes and graphene / metal sulfide composites include hydrothermal method, hard template method, electrochemical deposition method an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/86H01G11/24H01G11/30H01G11/36
CPCH01G11/24H01G11/30H01G11/36H01G11/86Y02E60/13
Inventor 冯立纲郁旭裴晨刚
Owner YANGZHOU UNIV
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