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Method for preparing homoepitaxial double-sided MgO thin films based on middle-frequency sputtering

A homogeneous epitaxy and thin film technology, which is applied in the direction of sputtering plating, ion implantation plating, metal material coating process, etc., can solve the problem that the uniformity of the film surface cannot be guaranteed, the structure and morphology of the film are not ideal, and the film cannot be continuous Growth and other issues, to achieve the effect of ensuring uniformity and consistency, improving cost performance, and saving costs

Inactive Publication Date: 2018-12-18
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the disadvantage of electron beam evaporation is that it takes a long time, and most of the energy of the electron beam will be taken away by the crucible, so its thermal efficiency is low; in addition, excessive heating power will also form a strong heat on the entire film deposition system. Radiation, and the prepared film structure and morphology are not ideal (root mean square roughness greater than 3nm)
[0004] Medium frequency magnetron reactive sputtering is more efficient than electron beam evaporation growth, but medium frequency (MF) magnetron reactive sputtering has a faster deposition rate when sputtering to grow films, so it is stricter on the gas flow field distribution in the reaction chamber. , if the gas flow field is unevenly distributed, the film cannot grow continuously, and the surface uniformity of the film cannot be guaranteed.

Method used

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  • Method for preparing homoepitaxial double-sided MgO thin films based on middle-frequency sputtering
  • Method for preparing homoepitaxial double-sided MgO thin films based on middle-frequency sputtering
  • Method for preparing homoepitaxial double-sided MgO thin films based on middle-frequency sputtering

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Embodiment

[0021] Embodiment: adopt intermediate frequency (MF) magnetron reactive sputtering, use magnesium target as metal sputtering target, in the coated with IBAD-MgO / SDP-Y 2 o 3 On the 500mm long and 10mm wide Hastelloy flexible substrate, a layer of MgO thin film was homogeneously epitaxy on both sides by intermediate frequency magnetron sputtering.

[0022] Step 1. Prepare and process the baseband. IBAD-MgO / SDP-Y with 10nm deposited on both sides 2 o 3 The Hastelloy flexible base tape is loaded into the first winding reel 1, and the other end of the base tape is introduced into the second winding reel 2; so that both sides of the Hastelloy flexible base tape are in good contact with the silver-tungsten alloy rods of the self-heating electrode units 10 and 11 , and the Hastelloy flexible base belt 5 moves at a constant speed under the control of the motor.

[0023] Step 2. Place the metal magnesium targets with a length of 80 mm, a width of 40 mm, and a thickness of 5 mm respe...

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Abstract

The invention belongs to the technical field of thin film preparation, and relates to a method for preparing homoepitaxial MgO thin films on the two sides of a flexible Hastelloy base band with the two sides simultaneously plated with IBAD (ion beam assisted deposition)-MgO / SDP-Y2O3, in particular to a method for preparing double-sided homoepitaxial MgO thin films based on middle-frequency (MF) magnetron reactive sputtering. According to the method, symmetrically-structured vent holes in a gas dispersion tube are adopted and used for evenly dispersing mixed gas, and therefore the problem thatthe thin films which are prepared through middle-frequency magnetron reactive sputtering are nonuniform is solved. The vent holes are designed in a one-way manner, so that the surfaces of target materials do not make contact with oxygen directly, and metal targets are prevented from oxidizing. The sputtering efficiency is improved by means of the air inflow mode, and uniformity and consistency ofthe double-sided simultaneous-growing MgO thin films are advantageously guaranteed. Compared with a traditional high-cost and complicated-technology physical vapor deposition (PVD) method, according to middle-frequency automatic-extensional MgO, the cost of a buffer layer is reduced, the price-performance ratio of superconducting tapes is increased, and the deposition rate is high.

Description

technical field [0001] The invention belongs to the technical field of thin film preparation, and relates to a film coated with IBAD (ion beam assisted deposition)-MgO / SDP (solution deposition planarization)-Y 2 o 3 The homoepitaxial MgO film is prepared on both sides of the metal flexible substrate at the same time, specifically, a double-sided homoepitaxial MgO film is prepared based on intermediate frequency (MF) magnetron reactive sputtering. Background technique [0002] YB 2 Cu 3 o 7-x (YBCO) tape has the advantages of high current-carrying level, high irreversible field, good superconductivity under magnetic field, and low cost, and has huge market potential. One of the prerequisites for YBCO superconducting coating to have superior critical current density Jc is to have excellent texture orientation, so the buffer layer substrate provided for its growth must also have good texture orientation. Then the first problem to be concerned about and overcome is how to o...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/0036C23C14/081C23C14/35
Inventor 陶伯万苟继涛赵睿鹏徐一鲡陈然贺冠园
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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