Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Doped region and IGBT device forming methods, and doped region and IGBT device structures

A technology of device structure and doped region, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of increasing edge cell failure rate, edge cell latching effect, large hole current, etc. Achieve the effect of increasing resistance value, strengthening suppression strength and saving cost

Active Publication Date: 2018-12-04
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At this time, if the hole current gathered together is large enough, it is very easy to trigger the latch-up effect of the edge cells, resulting in device failure.
In particular, as the voltage level of the IGBT device becomes higher and higher, the area of ​​the terminal region is correspondingly larger, so that the formed hole current is also larger, resulting in a significant increase in the failure rate of edge cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Doped region and IGBT device forming methods, and doped region and IGBT device structures
  • Doped region and IGBT device forming methods, and doped region and IGBT device structures
  • Doped region and IGBT device forming methods, and doped region and IGBT device structures

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0056] figure 1 It is a schematic flow chart of the method for forming the doped region in Embodiment 1 of the present invention, Figure 2a - Figure 2d It is a schematic structural diagram during the preparation process of the method for forming the doped region in Embodiment 1 of the present invention. Combine below figure 1 with Figure 2a As shown in -2d, the method for forming the doped region in the embodiment is described in detail.

[0057] First, execute step S11, for details, refer to Figure 2a As shown, a semiconductor substrate 100 is provided. The semiconductor substrate 100 may be an ion-doped semiconductor substrate. In this embodiment, the semiconductor substrate 100 is a semiconductor substrate of the first conductivity type, for example, an N-type semiconductor substrate.

[0058] Next, execute step S12, for details, refer to Figure 2b As shown, a patterned mask layer 110 is formed on the semiconductor substrate 100 , and the patterned mask layer 11...

Embodiment 2

[0063] Based on the method for forming the doped region described above, the present invention also provides a doped region, which is formed by using the method for forming the doped region as described above, that is, the doped region is formed by multiple Two overlapping implanted regions are formed, so that the formed doped regions have a lower doping concentration.

[0064] image 3 It is a schematic diagram of the structure of the doped region in Embodiment 2 of the present invention, such as image 3 As shown, in this embodiment, the doping region 121 is formed in a semiconductor substrate 100, and the doping region 121 includes a plurality of overlapping implantation regions. As mentioned above, since the doped region 121 is formed by overlapping with a plurality of implanted regions after ion diffusion, when forming the doped region 121 with the same area, the doped region 121 in this embodiment lower doping concentration. When the structure of the doped region is f...

Embodiment 3

[0066] Another object of the present invention is to provide a method for forming an IGBT device to form an IGBT device with a transition region. As mentioned above, based on the method for forming the doped region provided by the present invention, it can be applied to the transition region of the IGBT device, so as to effectively improve the effect of concentrating the hole carriers without changing the area of ​​the transition region. the inhibitory strength. At the same time, in the method for forming the IGBT device provided by the present invention, the ion implantation process for forming the doped region is performed simultaneously with the ion implantation processes of other manufacturing processes, which effectively simplifies the process and saves costs. That is, in the method for forming an IGBT device provided by the present invention, while forming the ion implantation process of the confinement ring in the termination region, several implantation regions are als...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides doped region and IGBT device forming methods, and doped region and IGBT device structures. The doped region forming method comprises the following steps: a plurality of injection regions are formed on a semiconductor substrate, and then ions in the plurality of injection regions are diffused by push-trap process so that adjacent injection regions are mutual overlapped to form a doped region. The multiple injection regions form the doped region through ion diffusion, and then the formed doped region has a low doping concentration in a condition that the area of the dopedregion is not changed. So, when the doped region is formed in an interface of an IGBT device, a resistance value of a ballast resistor in the interface can be effectively increased, and suppression intensity of a convergence effect of hole carriers of the interface can be improved without increasing the area of the interface.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method and structure for forming a doped region and an IGBT device. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT, Insulated Gate Bipolar Transistor) is a new type of high-power device, which combines MOSFET gate voltage control characteristics and low on-resistance characteristics of bipolar transistors, improving device withstand voltage and on-resistance The situation of mutual containment has the advantages of high voltage, high current, high frequency, high power integration density, large input impedance, small on-resistance, and low switching loss. It has gained wide application space in many fields such as frequency conversion home appliances, industrial control, electric and hybrid vehicles, new energy, and smart grid. [0003] In an IGBT device, a terminal ring is generally provided around the active region of the IGBT devi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L29/08H01L21/336H01L29/739
CPCH01L21/0257H01L29/08H01L29/66325H01L29/7393
Inventor 刘剑
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com