Non polarity A side nitride film growing on the silicon substrate and its making method and use
A silicon substrate, non-polar technology, applied in the field of non-polar A-side nitride films
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Embodiment 1
[0059] Embodiment 1, prepare the nonpolar (11) that grows on the silicon substrate 0) A-side nitride film
[0060] A substrate with an off-angle of 5 degrees from silicon (100) to (010) is used, the thickness of the silicon wafer is 300 microns, the silicon wafer is N-type doped, and has low resistivity. After the silicon wafer is treated with organic solvent and hydrofluoric acid, it is sent into the MOCVD reaction chamber. The temperature of the reaction chamber is raised to 1100° C., the atmosphere of the reaction chamber is hydrogen, and the surface of the cleaned silicon substrate is annealed for desorption treatment to remove the oxide layer on the surface of the substrate. The temperature of the reaction chamber was lowered to 450°C, hydrogen was used as the carrier gas, and trimethylaluminum was passed through, and an Al metal layer with a thickness of 10 angstroms was deposited and grown on the surface of the silicon substrate through the pyrolysis reaction of trime...
Embodiment 2
[0061] Embodiment 2, preparation of the non-polar A-side nitride thin film grown on the silicon substrate
[0062] A pattern substrate with a 12-degree off-angle of silicon (100) to (010) is used. The pattern on the surface of the silicon wafer is a one-dimensional grating pattern with a width of 6 microns, a height of 2 microns, and a pitch of 6 microns. It is prepared by dry etching. , the thickness of the silicon wafer is 300 microns, the silicon wafer is N-type doped, and has low resistivity. After the silicon wafer is treated with organic solvent and hydrofluoric acid, it is sent into the MOCVD reaction chamber. The temperature of the reaction chamber is raised to 600° C., the atmosphere of the reaction chamber is hydrogen, and the surface of the cleaned silicon substrate is annealed for desorption treatment to remove the oxide layer on the surface of the substrate. The temperature of the reaction chamber is lowered to 400°C, hydrogen is used as the carrier gas, and trim...
Embodiment 3
[0063] Embodiment 3, preparation of the non-polar A-side nitride thin film grown on the silicon substrate
[0064]A silicon (100) substrate is used, the thickness of the silicon wafer is 300 microns, the silicon wafer is N-type doped, and has low resistivity. After the silicon wafer is treated with organic solvent and hydrofluoric acid, it is sent into the MOCVD reaction chamber. The temperature of the reaction chamber is raised to 600° C., the atmosphere of the reaction chamber is hydrogen, and the surface of the cleaned silicon substrate is annealed for desorption treatment to remove the oxide layer on the surface of the substrate. The temperature of the reaction chamber is lowered to 400°C, and the initial growth layer of InGaAlN is directly grown. With hydrogen as the carrier gas, trimethylaluminum and ammonia gas are passed through, and through the reaction of the two, the growth thickness of 100 angstroms AlN layer; the reaction chamber is heated to 600°C, and the AlN l...
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