An avalanche transistor series-parallel high-voltage fast-edge switch circuit

Abstract

The invention relates to an avalanche transistor series-parallel high-voltage fast-edge switch circuit, comprising: a DC high-voltage unit, a trigger unit, a current limiting resistor, an energy storage voltage divider unit, an avalanche transistor series unit and a parallel unit, and the avalanche transistor series unit includes several series subunits. unit, the series sub-unit includes a pulse transformer, trigger avalanche transistor and several common avalanche transistors, the parallel unit includes several parallel sub-units, the parallel sub-unit includes several series sub-units and energy storage and voltage division unit, each series sub-unit has the same structure, each The energy storage and voltage division units have the same structure. The invention adopts technologies such as cascading of subunits in series, energy storage and voltage division, and synchronous triggering of pulse transformers, so that the entire circuit has fast switching speed, large withstand voltage value and peak current, and strong driving ability; the entire circuit is miniaturized, solidified, and modularized. , no need for synchronous adjustment, high reliability and strong adaptability.

Description

technical field [0001] The invention relates to the technical field of high-voltage pulses, in particular to an avalanche transistor series-parallel high-voltage fast-edge switching circuit. Background technique [0002] High-voltage fast-edge switching circuits are widely used, such as electro-optic Q-switches in laser technology, high-speed photography shutters, sampling or gating pulses in nuclear physics and radar fields, etc. The key to generating high-voltage fast-edge pulses is the high-voltage fast-edge switch circuit. The existing fast-edge high-voltage switch technology is mainly divided into two categories: one is based on secondary electron emission tubes, discharge gap switches, trigger tubes, hydrogen thyristors and other electric vacuum device switches. The second is solid-state device switching technology based on avalanche transistors, high voltage field effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). [0003] Electrovacuum devi...

AI Technical Summary

Problems solved by technology

[0005] However, since the avalanche operating voltage of the avalanche transistor has an optimal range, especially the output voltage of a single transistor is low, when multiple transistors are connected in series or multi-stage Marx circuits are cascaded, when the number of avalanche transistors in series reaches a certain number, the avalanche transistor Due to the difference in parameters, the voltage distribution of each tube is uneven, and self-avalanche conduction will occur. So far, there has been no report on the withstand voltage of series-connected avalanche transistors exceeding 5kV.

At the same time, affected by the internal resistance of the circuit and the distribution parameters of the circuit, when the number of cascaded Marx circuits increases, the increase in the output pulse amplitude is not obvious. Therefore, the existing avalanche transistor series connection method needs to obtain a reliable high-voltage avalanche switch circuit. very difficult

[0006] When multiple transistors or multi-stage Marx circuits are connected in parallel, due to the parameter difference of avalanche transistors, the avalanche operating voltage or trigger voltage has an optimal range. In order to realize synchronous avalanche, it is necessary to select avalanche transistors with consistent parameters. Due to the influence of differences, it is very difficult to select an avalanche transistor with consistent parameters

However, the existing technologies of time-sharing triggering, bias voltage adjustment, and structural symmetry have problems such as the more the number of parallel connections, the more complex the circuit structure, the difficulty of control, and the output voltage amplitude is limited by the load resistance, which limits the further development of these technologies. Improve the feasibility and reliability of output current through multi-channel parallel connection

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