Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of annular varistor material, its preparation method and application

A varistor and ring-shaped technology, applied in the direction of varistors, etc., can solve the problems of large safety hazards, poor temperature stability, and difficult process parameters in the production workshop, and achieve convenient material performance, stable temperature characteristics, and large dielectric constant. Effect

Active Publication Date: 2021-02-09
GUANGDONG FENGHUA ADVANCED TECH HLDG
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] Ring varistors, the material used in mature products is strontium titanate, the product must be sintered in a reducing atmosphere before oxidation can be used for ring pressure products, this process is difficult to control, high cost, involving hydrogen, production workshop Big security risk
The traditional strontium titanate material has a dielectric constant of about 30,000, poor temperature stability, and high cost. It involves sintering in a reducing atmosphere, which is difficult to form, difficult to control process parameters, and high defective rate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of annular varistor material, its preparation method and application
  • A kind of annular varistor material, its preparation method and application
  • A kind of annular varistor material, its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] An embodiment of the annular varistor material of the present invention, the annular varistor material described in this embodiment is prepared by the following method:

[0032] The formula of powder A is: TiO2 1mol, In 2 o 3 0.0125mol, Nb 2 o 5 0.0125mol;

[0033] The formula of powder B is: powder A 100g, SiO 2 Oxide 3.0g.

[0034] Add powder A to the polyurethane ball mill tank according to the proportion, add absolute ethanol as a solvent according to the mass ratio of 1:1.2, and add zirconium balls according to the ratio of material to ball = 1:5. After ball milling for 24 hours, the balls are separated. , dried in an oven at 75°C, treated in an air atmosphere at 1400-1470°C / 1-3h, ball milled again for 12h after treatment, and obtained powder A with a D50 of 0.5um;

[0035] The obtained powder A is ball milled or stirred for 3 hours again, and materials are doped during the process of ball milling or stirring, and SiO 2 Oxide, after ball milling and dryin...

Embodiment 2

[0038] An embodiment of the annular varistor material of the present invention, the annular varistor material described in this embodiment is prepared by the following method:

[0039] The formula of powder A is: TiO 2 1mol, Ta 2 o 3 0.0025mol, Nb 2 o 5 0.0025mol;

[0040] The formula of powder B is: powder A 100g, SiO 2 Oxide 0.5g.

[0041] Add powder A to the polyurethane ball mill tank according to the proportion, add absolute ethanol as a solvent according to the mass ratio of 1:1.2, and add zirconium balls according to the ratio of material to ball = 1:5. After ball milling for 24 hours, the balls are separated. , dried in an oven at 75°C, treated in an air atmosphere at 1400-1470°C / 1-3h, ball milled again for 12h after treatment, and obtained powder A with a D50 of 0.5um;

[0042] The obtained powder A is ball milled or stirred for 3 hours again, and materials are doped during the process of ball milling or stirring, and SiO 2 Oxide, after ball milling and dry...

Embodiment 3

[0045] An embodiment of the annular varistor material of the present invention, the annular varistor material described in this embodiment is prepared by the following method:

[0046] The formula of powder A is: TiO 2 1mol, In 2 o 3 0.025mol, Nb 2 o 5 0.025mol;

[0047] The formula of powder B is: powder A 100g, silicate 0.5g.

[0048] Add powder A to the polyurethane ball mill tank according to the proportion, add absolute ethanol as a solvent according to the mass ratio of 1:1.2, and add zirconium balls according to the ratio of material to ball = 1:5. After ball milling for 24 hours, the balls are separated. , dried in an oven at 75°C, treated in an air atmosphere at 1400-1470°C / 3h, ball milled again for 12h after treatment, and obtained powder A with a D50 of 0.5um;

[0049] The obtained powder A is again ball milled or stirred for 3 hours with pure water as the solvent, and materials are doped during the ball milling or stirring process, doped with silicate, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method of a ring-shaped varistor material, which comprises the following steps: (1) firstly making TiO 2 doped In 3+ , Y 3+ , Ga 3+ , La 3+ 、Dy 3+ 、Nd 3+ At least one of and Nb 5+ 、 Ta 3+ , V 5+ At least one of the doped materials is obtained, and then the doped materials are subjected to air atmosphere heat treatment at 1400-1470 °C for 1-3 hours, and then the treated materials are ball-milled and dried to obtain powder A ; (2) Coating a layer of Al on the surface of powder A 2 o 3 , ZrO 2 , MgO, ZnO, Sr 2 o 3 、Cr 2 o 3 , CaO oxide layer or containing Si 4+ 、Al 3+ 、Zr 4+ , Mg 2+ , Zn 2+ 、Sr 3+ 、Cr 3+ A compound layer of ions is obtained to obtain powder B, which is the annular varistor material of the present invention.

Description

technical field [0001] The invention relates to a resistance material, its preparation method and application, in particular to a ring-shaped varistor material, its preparation method and application. Background technique [0002] Ring varistors, the material used in mature products is strontium titanate, the product must be sintered in a reducing atmosphere before oxidation can be used for ring pressure products, this process is difficult to control, high cost, involving hydrogen, production workshop There is a big security risk. The traditional strontium titanate material has a dielectric constant of about 30,000, poor temperature stability, high cost, involves sintering in a reducing atmosphere, is difficult to form, difficult to control process parameters, and has a high rate of defective products. Contents of the invention [0003] Based on this, the object of the present invention is to provide a ring-shaped piezoresistive material for overcoming the disadvantages o...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/46C04B35/626C04B35/628C04B35/622C04B41/88H01C7/10
CPCC04B35/46C04B35/622C04B35/62615C04B35/62675C04B35/6268C04B35/62807C04B41/009C04B41/5116C04B41/88C04B2235/3251C04B2235/3286H01C7/10
Inventor 张津玮冼锐炜付振晓沓世我
Owner GUANGDONG FENGHUA ADVANCED TECH HLDG
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com