Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon nitride and preparation method thereof

A silicon nitride and nitrogen technology, applied in chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of unfavorable large-scale production, harsh equipment requirements, high pressure, and achieve large-scale industrial production. , the effect of high production efficiency

Active Publication Date: 2018-09-14
SUZHOU GCL ENERGY TECH DEV CO LTD
View PDF11 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The silicon dioxide carbothermal reduction method is to fully mix silicon dioxide powder and carbon powder, and use carbon to reduce silicon dioxide in a flowing nitrogen or ammonia atmosphere. This method uses silicon dioxide, which is very abundant in nature, as a raw material. Faster reaction rate, especially suitable for large-scale production, and the reaction product is a loose powder after heat treatment, the powder shape is regular, the particle size distribution is narrow, and there is no need for crushing treatment, thereby avoiding the re-introduction of impurities; for example, Germany Bayer reported in JP62241812 that silicon dioxide, carbon and ammonia were used to prepare silicon nitride at high temperature. The disadvantage is that at high temperature, silicon carbide may be generated, which directly affects the yield and purity of silicon nitride.
[0020] Because calcium fluoride and other substances are usually added in this method, the content of calcium and other metal elements in the powder after synthesis increases, which affects the performance of the powder, and the reaction process is under high pressure, which is not safe and requires harsh equipment. , not conducive to mass production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nitride and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0040] See figure 1 , the preparation method of silicon nitride of an embodiment, comprises the following steps:

[0041] S10, using nitrogen gas to perform gas atomization treatment on the silicon particles to obtain gas atomized silicon powder.

[0042] Preferably, the silicon particles have a size of 10 μm-2000 μm.

[0043] Preferably, the purity of the silicon particles is ≥6N (6N=99.9999%). Due to the high purity of silicon particles, high-purity silicon nitride can be prepared by using the silicon nitride preparation method of this embodiment, and the purity of silicon nitride can also reach 6N.

[0044] Preferably, the nitrogen in step S10 is high-purity nitrogen to avoid introducing impurities in the nitrogen.

[0045] S20. Continuously feed the nitrogen gas in the plasma state and the atomized silicon powder obtained in step S10 into the reactor, and keep the temperature of the reactor at 1300° C. to 1450° C., and then perform solid-gas separation and retain the so...

Embodiment 1

[0064] After mixing high-purity nitrogen, hydrogen and argon, pass it into the plasma generator, start the plasma power supply, and make the plasma generator generate a plasma arc, and the mixed gas flowing through the plasma arc is heated to above 5000°C to obtain Nitrogen in plasma state in protective gas atmosphere.

[0065] Use high-purity nitrogen gas to conduct gas atomization treatment on industrial silicon particles to obtain gas atomized silicon powder.

[0066] Continuously feed the nitrogen gas in the plasma state and the atomized silicon powder into the reactor, and keep the temperature of the reactor at 1300°C to 1450°C, and then carry out solid-gas separation and retain the solid.

[0067] Take 1000g of the obtained solid, after testing, it contains 400g of unreacted silicon, add 120g of α-phase silicon nitride, 38g of ammonium fluoride and 4.2g of ammonium iodide, mix it and put it into a graphite crucible, then put the graphite crucible Put it in a heating fur...

Embodiment 2

[0070]After mixing high-purity nitrogen, hydrogen and argon, pass them into the plasma generator, start the plasma power supply, and make the plasma generator generate a plasma arc, and the mixed gas flowing through the plasma arc is heated to above 5000°C to obtain Nitrogen in plasma state in protective gas atmosphere.

[0071] High-purity silicon particles (≥6N) are subjected to gas atomization treatment with high-purity nitrogen gas to obtain gas-atomized silicon powder.

[0072] The nitrogen gas in the plasma state and the atomized silicon powder are continuously fed into the reactor, and the temperature of the reactor is kept at 1300°C to 1450°C, and then the solid and gas are separated and the solid is retained.

[0073] Take 1000g of the obtained solid, after testing, it contains 600g of unreacted silicon, add 200g of α-phase silicon nitride, 70g of ammonium fluoride and 5.6g of ammonium iodide to the solid, mix it and put it into a graphite crucible, then put the graph...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
Login to View More

Abstract

The invention relates to silicon nitride and a preparation method thereof. The preparation method of the silicon nitride comprises the following steps: performing gas atomization treatment on siliconparticles by using nitrogen to obtain silicon powder subjected to gas atomization; continuously nitrogen under the plasma state and the silicon powder subjected to gas atomization into a reactor, maintaining the temperature of the reactor to 1300 to 1450 DEG C, performing solid and gas separation and retaining solid; and adding alpha-phase silicon nitride, ammonium fluoride and ammonium iodide into the solid, mixing uniformly, vacuumizing, introducing mixed gas of nitrogen and hydrogen until the pressure is increased to the gauge pressure of 0.005 to 0.05 MPa, heating to 1200 to 1250 DEG C, continuously introducing the mixed gas of nitrogen and hydrogen until the pressure is increased to the gauge pressure of 0.01 to 0.1 MPa, maintaining the reaction time for 5 to 10 hours, and cooling after complete reaction to obtain the silicon nitride. The preparation method of the silicon nitride is a composite synthesis method. By the preparation method of the silicon nitride, high alpha-phase silicon nitride can be obtained.

Description

technical field [0001] The invention relates to the field of inorganic non-metallic materials, in particular to a silicon nitride and a preparation method thereof. Background technique [0002] Silicon nitride (Si 3 N 4 ) Ceramics have a series of advantages such as high hardness, high strength, wear resistance, high temperature resistance, small thermal expansion coefficient, large thermal conductivity, good thermal shock resistance and low density. They are used in ceramic engines, machining, microelectronics, and space science. And nuclear power engineering and other fields, has a very broad application prospects. Related products such as silicon nitride ceramic cutting tools, silicon nitride ceramic bearings, automotive engine valves, automotive turbochargers, heaters, various wear-resistant, high-temperature resistant, corrosion-resistant parts, etc. have been used in aviation, electronics, chemical industry, automotive Widely used in other fields. With the continuo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/068
CPCC01B21/0682C01P2006/80
Inventor 朱青松何文
Owner SUZHOU GCL ENERGY TECH DEV CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products