A kind of preparation method of flexible film varactor
A flexible film and varactor technology, which is applied in semiconductor/solid-state device manufacturing, vacuum evaporation plating, coating, etc., to achieve the effects of good flexibility, high tuning rate, and good device stability
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0024] (1) Clean the copper foil surface with a purity of 99%, a surface roughness of 100nm, and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate;
[0025] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.
[0026] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 3.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide thin film layer, the purity of Ar is 99.99%, the radiation power is 80W, and the substrate temperature is 300°C, and the Al-doped zinc oxide film with a thickness of 200nm is deposited. film layer.
[0027] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering chambe...
Embodiment 2
[0033] (1) Clean the surface of the copper foil with a purity of 99%, a surface roughness of 100nm and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate.
[0034] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.
[0035] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 5.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide thin film layer, the purity of Ar is 99.99%, the sputtering power is 80W, and the substrate temperature is 500°C, and the Al-doped zinc oxide film with a thickness of 100nm is deposited. film layer.
[0036] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering...
Embodiment 3
[0042] (1) Clean the surface of the copper foil with a purity of 99%, a surface roughness of 100nm and a thickness of 100um, and put it on the sample stage in the magnetron sputtering chamber as a flexible substrate.
[0043] (2) Install the Al-doped zinc oxide target on the target head of magnetron sputtering, and the distance between the target and the substrate is 60 mm.
[0044] (3) After step (2) is completed, the background vacuum of the magnetron sputtering system is pumped to 9.0×10 -4 Pa, use Ar gas as the sputtering gas to sputter the Al-doped zinc oxide film layer, the purity of Ar is 99.99%, the sputtering power is 80W, and the substrate temperature is 100°C to deposit a 400nm thick Al-doped zinc oxide film layer.
[0045] (4) Take out the substrate, cover it with a mask plate on the surface of the Al-doped zinc oxide film layer, leave the position of the bottom electrode, and put it on the sample stage in the magnetron sputtering chamber.
[0046] (5) BZT is BaZr ...
PUM
Property | Measurement | Unit |
---|---|---|
thickness | aaaaa | aaaaa |
thickness | aaaaa | aaaaa |
surface roughness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com