Preparation method of millimeter-scale monolayer monocrystalline graphene based on polycrystalline copper foil

Abstract

The invention discloses a preparation method of millimeter-scale monolayer monocrystalline graphene based on a polycrystalline copper foil and belongs to the technical field of thin film graphene material preparation. The preparation method includes: in an atmosphere with argon, hydrogen and oxygen, heating a copper foil; utilizing methane for catalytic cracking on the surface of the copper foil;growing on the inner wall of a rectangular box to form large-size monolayer monocrystalline graphene. Complex pretreatment of the copper foil is not needed, and the surface of the copper foil can be simply cleaned by only using anhydrous alcohol, so that introduction of new impurities is avoided. Pre-oxidation treatment of the copper foil is not needed, and monocrystalline growth of graphene can be realized by controlling flow of oxygen and pressure intensity in a CVD reaction cavity in the process of preparing graphene. On the premise that optimal oxygen flow parameters are utilized, growth time of monocrystalline graphene is controlled by controlling lasting time of methane to regulate size of monocrystalline graphene.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin-film graphene materials, and in particular relates to a preparation method of millimeter-scale single-layer single-crystal graphene based on polycrystalline copper foil. Background technique [0002] Graphene is carbon atoms through SP 2 A two-dimensional material with a honeycomb structure formed by hybridization. This material has excellent electrical conductivity, heat transfer, light transmission and flexibility properties, so it is widely used in many applications typified by optoelectronic devices. In addition, under the premise of achieving graphene (especially graphene single crystal) bandgap regulation and fast, low-cost preparation, graphene may even replace traditional semiconductor materials such as silicon and germanium, and become the basic material of the next generation of information integration devices. . However, the various excellent properties of graphene can on...

AI Technical Summary

Problems solved by technology

This method uses dilute hydrochloric acid to clean the copper foil. The cleaning degree and cleaning time of the copper foil are difficult to control, and after being corroded by dilute hydrochloric acid, the surface of the copper foil becomes dirty, and new impurities are easily introduced, which affects the subsequent preparation of graphene.

[0005] The present invention proposes a new preparation method, which can clean the copper foil surface without complex pretreatment of the copper foil, and at the same time realize millimeter-scale single-layer by controlling the oxygen flow rate and the air pressure of the CVD reaction chamber The growth of single crystal graphene overcomes the problem that copper foil pre-oxidation is difficult to quantify

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