Organic thin film transistor containing dual dielectric layers and fabrication method of organic thin film transistor

Abstract

The invention discloses an organic thin film transistor containing dual dielectric layers and a fabrication method of the organic thin film transistor. The organic thin film transistor sequentially comprises a gate substrate, a first dielectric layer, a second dielectric layer, an organic semiconductor layer and an electrode from bottom to top, wherein the material of the first dielectric layer isan inorganic dielectric material or a polymer material with a dielectric constant larger than 5, the material of the second dielectric layer is fluorine-containing polyimide, and the organic semiconductor layer and the second dielectric layer both are in overlapped joint with the electrode. The probability of charge trapped by a pit is reduced by hydrophobicity of the fluorine-containing polyimide at an upper layer, and meanwhile, the thermal stability of the transistor is improved by thermal expansion coefficient and favorable extensibility which are relatively matched of the fluorine-containing polyimide; the dielectric layer at a lower layer is used for reducing a dark current of the device, and positive drift of a threshold voltage is prevented; and by designing dual dielectric layers, the thermal stability and the electrical stability of the organic thin film transistor are improved.

Description

technical field [0001] The invention relates to the technical field of transistors, in particular to an organic thin film transistor containing double dielectric layers and a preparation method thereof. Background technique [0002] Organic thin-film transistors (OTFT), compared with transistors made of inorganic materials, have better mechanical flexibility and manufacturing convenience, and have greatly improved carrier mobility, operating voltage and manufacturing methods, and can Applications such as large-area flexible displays, memory, radio frequency identification tags and electronic components such as chemical or biological sensors. [0003] However, organic thin film transistors suffer from serious thermal and electrical instability defects in practical applications. Thermal instability manifests itself as degradation of the device and can be attributed to: changes in crystal structure or morphology, or thermally induced mechanical stress from a large thermal expa...

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Problems solved by technology

[0005] In view of the above deficiencies in the prior art, the object of the present invention is to provide an organic thin film transistor containing a double-layer dielectric layer and its preparation method, aiming to solve the problems of thermal and electrical instability in existing transistors

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