Method for preparing Cu-doped indium-oxide nanowire based on regulable porous silicon substrate

Abstract

The invention discloses a method for preparing a Cu-doped indium-oxide nanowire based on a regulable porous silicon substrate. With a CVD method, an indium-oxide nanowire is prepared; and a substratematerial is processed to prepare a porous substrate with the uniform surface, so that a nanowire structure with a regular array is made. With the method disclosed by the invention, the holes in the substrate surface can be adjusted based on the needed condition; and the hole distribution and hole dimensions are changed and catalyst gold is injected into the holes, so that the nanowire growth / distribution / dimension is regulated. Therefore, nano-particle and block generation during the preparation process is reduced effectively; the prepared nanowire can be bonded to the substrate firmly; and thus the prepared Cu-doped indium-oxide nanowire has the great actual application value.

Description

technical field [0001] The invention relates to a method for preparing a Cu-doped indium oxide nanometer material, belonging to the field of nanometer material preparation. Background technique [0002] Indium oxide nanomaterials have gradually become a research hotspot in wide bandgap semiconductor nanomaterials due to their wide bandgap, good conductivity, low electron affinity, high breakdown electric field and better chemical stability. Devices, gas sensors, solar panels and displays have good application prospects. In recent years, people have made some progress in the preparation and performance research of indium oxide nanomaterials. Researchers have prepared various nanostructures of indium oxide materials through a variety of physical and chemical methods, and corresponding progress has been made in the field of research on the luminescence properties of indium oxide nanostructures, but there are still many issues that need to be further studied. At the same time,...

AI Technical Summary

Problems solved by technology

1. The reaction temperature is high, and the deposition rate is very low, about a few microns or hundreds of microns per hour

2. The gas flow rate of the carrier gas is difficult to control, and the reactants cannot be accurately deposited on the required position on the substrate, and the diameter of the nanowire has too many controllable variables to determine the accurate process parameters

3. The samples of nanowires grown on silicon substrates are not uniform due to the use of catalysts, and the distribution and size of the reaction process cannot be controlled, so the shape of the grown nanowires is irregular, uneven and easy to form clusters

Images