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Conductive titanium oxide ceramic sputtering target and preparation method thereof

A titanium oxide and titanium oxide thin film technology is applied in the field of conductive titanium oxide ceramic sputtering targets and their preparation, and can solve the problems of high production cost, affecting target performance and density uniformity, and high operating vacuum.

Active Publication Date: 2018-06-26
宁波森利电子材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with the DC magnetron sputtering method, the radio frequency magnetron sputtering method has the following disadvantages: low sputtering efficiency, high power consumption, etc.
There are following deficiencies in the above method: (1) the input of vacuum hot pressing equipment and discharge plasma equipment is relatively large, and the operating vacuum degree is higher (10 -3 Pa), leading to higher production costs of the product; (2) It is difficult to prepare large-sized titanium oxide targets due to the limitation of equipment mold size; (3) The initial conditions of the powder raw materials affect the uniformity and density of the final target. It has a great influence, although the addition of metal powders such as Ti powder helps to improve the TiO 2 The conductivity of the target material, but due to the difference in particle size and density, Ti powder is not easy to 2 The powder is evenly distributed, which will further affect the performance and density uniformity of the target, so the above preparation method is difficult to control the batch quality in actual production

Method used

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  • Conductive titanium oxide ceramic sputtering target and preparation method thereof

Examples

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preparation example Construction

[0068] The invention provides a method for preparing a titanium oxide target, comprising the following steps:

[0069] 1) Provide modified titanium oxide nanopowder;

[0070] 2) compressing the modified titanium oxide nanopowder into a ceramic green body;

[0071] 3) Sintering the ceramic green body in a vacuum atmosphere or an inert atmosphere to obtain the titanium oxide target.

[0072] In the present invention, the modified titanium oxide nanopowder is prepared as follows:

[0073] i) providing the first mixture containing titanium oxide nanopowder, reducing organic matter and solvent;

[0074] ii) ball milling the first mixture to obtain a second mixture;

[0075] iii) drying the second mixture to obtain a third mixture;

[0076] iv) calcining the third mixture to obtain a fourth mixture;

[0077] v) cooling the fourth mixture to obtain the modified titanium oxide nanopowder.

[0078] In another preferred example, the particle size of the titanium oxide nanopowder i...

Embodiment 1

[0143] Embodiment 1 Preparation of modified titanium oxide powder 1

[0144] 1. Mix titanium dioxide powder in rutile crystal form (with a particle size of about 350 nm), citric acid and water at a molar ratio of 1:0.05:0.3 to obtain mixture 1.

[0145] 2. The above mixture 1 is ball milled for 10-15 hours to form slurry 1;

[0146] 3. Take out the above slurry 1 and place it in an oven at 70-80°C to dry for 10-15 hours, then calcinate at 350-400°C for 3-5 hours at a low temperature, and grind to form powder after cooling to obtain modified titanium oxide powder 1. As a starting material for ceramic sintering.

[0147] result

[0148] The modified titanium oxide powder 1 obtained in Example 1 was detected by SEM or the like.

[0149] figure 1 It is the SEM detection result of the modified titanium oxide powder 1 obtained in Example 1.

[0150] from figure 1 It can be seen that the particle size of the modified titanium oxide powder 1 is about 300-500 nanometers.

Embodiment 2

[0151] Embodiment 2 Preparation of modified titanium oxide powder 2

[0152] Same as Example 1, the difference is that ethylene glycol is used instead of citric acid, and the mixing molar ratio of the rutile crystal form titanium dioxide powder (particle size is about 350nm), ethylene glycol and water described in step 1 is 1:0.1:0.4 .

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Abstract

The invention relates to a conductive titanium oxide ceramic sputtering target and a preparation method thereof. Specifically, the invention discloses a preparation method for a titanium oxide target.The preparation method comprises the following steps: 1) providing modified titanium oxide nanometer powder; 2) subjecting the modified titanium oxide nanometer powder to compression molding so as toobtain a green ceramic body; and 3) sintering the green ceramic body in a vacuum atmosphere or an inert atmosphere to obtain the titanium oxide target. The invention also discloses the titanium oxidetarget prepared by using the method and a titanium oxide film prepared through sputtering of the target. The method is simple in process, low in cost, and easy to prepare the titanium oxide target with uniform and stable performance, thereby facilitating preparation of the titanium oxide film with excellent performance.

Description

technical field [0001] The invention relates to the field of optoelectronic materials, in particular to a conductive titanium oxide ceramic sputtering target and a preparation method thereof. Background technique [0002] Titanium oxide (TiO 2 ) as an important oxide ceramic magnetron sputtering target is being widely used. The titanium dioxide film deposited by magnetron sputtering not only has physical and chemical stability such as wear resistance, corrosion resistance and oxidation resistance, but also has reflection, transmission, interference, diffraction, absorption, dispersion and electromagnetic wave, electronic circuit, dielectric and Characterization of insulating optoelectronic media. Titanium oxide film has good transmittance and high refractive index in the wavelength range of 0.4-3μm (when λ=500nm, n=2.35; when λ=2μm, n=2.2), it can be used to produce low-emissivity glass, reduce Reflective glass, vanishing transition layer for flat panel display applicatio...

Claims

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Application Information

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IPC IPC(8): C04B35/46C04B35/626
CPCC04B35/46C04B35/626C04B2235/5445C04B2235/608C04B2235/6581C04B2235/77
Inventor 杨晔兰品军宋伟杰朱永明
Owner 宁波森利电子材料有限公司
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