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Trench triode and manufacturing method thereof

A manufacturing method and technology of triodes, which are applied in the manufacture of transistors, semiconductor/solid-state devices, electrical components, etc., can solve the problems of large base drive current, large dynamic loss, low operating frequency, etc., so as to improve the cut-off frequency and withstand voltage. , the effect of reducing parasitic capacitance

Active Publication Date: 2018-06-08
浙江昌新生物纤维股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with MOS tubes and IGBTs, triodes have large dynamic losses, large base drive currents, large on-resistance, and low operating frequency, so the proportion of applications on the market is much smaller than that of MOS or IGBTs.

Method used

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  • Trench triode and manufacturing method thereof
  • Trench triode and manufacturing method thereof
  • Trench triode and manufacturing method thereof

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Embodiment Construction

[0029] The following will clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0030] see Figure 1-Figure 14 , figure 1 It is a flow chart of the manufacturing method of the trench triode of the present invention, Figure 2-Figure 14 for figure 1 The structural schematic diagram of each step of the manufacturing method of the trench triode is shown. The manufacturing method of the trench triode includes the following steps.

[0031] Step S1, see figure 2 , providing an N-type substrate, and forming an N-type epitaxial layer on the N-type substrate. Wherein, the thickness of the N-type s...

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Abstract

The invention relates to a trench triode and a manufacturing method thereof. The trench triode comprises an N-type substrate, an N-type epitaxial layer which is formed on the N-type substrate, a P-type base region which is formed on the surface of the N-type epitaxial layer, multiple trenches which penetrate through the P-type base region and extend to the N-type epitaxial layer, a P-type high doped region which is formed on the side wall of multiple trenches, P-type polycrystalline silicon which is arranged in multiple trenches, an N-type region which is formed on the surface of the P-type base region, a TEOS oxide layer which is formed on the P-type polycrystalline silicon and the -type high doped region, emitter polysilicon which is formed on the N-type region, a contact hole which penetrates through the TEOS oxide layer and is corresponding to the P-type polycrystalline silicon, front metal and back metal. The front metal comprises an emitter which is formed on the emitter polysilicon and a base electrode which is formed on the TEOS oxide layer and connected with the P-type polycrystalline silicon through the contact hole. The back metal is formed on the surface, which is awayfrom the N-type epitaxial layer, of the N-type substrate to act as the collecting electrode.

Description

【Technical field】 [0001] The invention relates to the technical field of semiconductor manufacturing technology, in particular to a trench triode and a manufacturing method thereof. 【Background technique】 [0002] Power devices are the core devices of the modern power electronics industry. Semiconductor new energy technology and national energy saving and consumption reduction policies are inseparable from the support of power devices, such as MOSFETs and IGBTs developed based on MOSFETs. Compared with MOS tubes and IGBTs, triodes have large dynamic losses, large base drive currents, large on-resistance, and low operating frequency, so the proportion of applications on the market is much smaller than that of MOS or IGBTs. How to increase the driving current of the triode, reduce its on-resistance, and increase its operating frequency has always been a key research topic for integrated circuit engineers. 【Content of invention】 [0003] In view of the above, the present inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/73H01L21/331
CPCH01L29/66234H01L29/73
Inventor 不公告发明人
Owner 浙江昌新生物纤维股份有限公司
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