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Aluminum nitride ceramic substrate line etching method

A technology of aluminum nitride ceramics and substrates, which is used in the removal of conductive materials by chemical/electrolytic methods, printed circuits, lithography/patterns, etc. and other problems to achieve the effect of ensuring uniformity

Active Publication Date: 2018-05-15
北京漠石科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a circuit etching method for aluminum nitride ceramic substrates, which uses multi-step etching and a new etching solution formula to solve the problems of circuit etching residues, solder alloy layer and interface reaction layer that are difficult to remove

Method used

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  • Aluminum nitride ceramic substrate line etching method
  • Aluminum nitride ceramic substrate line etching method
  • Aluminum nitride ceramic substrate line etching method

Examples

Experimental program
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Effect test

Embodiment 1

[0025] 1. The surface of the conductive metal copper layer of the aluminum nitride ceramic substrate is treated, coated with photosensitive ink, and the patterned photosensitive ink is cured on the metal side of the copper clad laminate after exposure and development, and the reaction of iron trichloride and copper is used to selectively remove Metal copper conductive layer 4 until the solder layer 3 is exposed, such as image 3 Shown.

[0026] 2. At room temperature, immerse the sample exposed to the solder layer 3 into an etching solution of nitric acid and hydrogen peroxide with a volume ratio of 0.3:0.8 to react until the solder layer 3 is completely removed, until the interface reaction layer 2 is exposed, such as Figure 4 Shown.

[0027] 3. Immerse the sample exposing the interface reaction layer 2 into the etching solution of sulfuric acid hydrogen peroxide and water with a volume ratio of 0.5:0.3:0.1 until the interface reaction layer is completely removed and the ceramic s...

Embodiment 2

[0030] 1. The above steps are the same. At room temperature, immerse the sample exposed to the solder layer 3 into a 2:1.5 volume ratio of nitric acid and hydrogen peroxide etching solution to react until the solder layer 3 is completely removed, until the interface reaction layer is exposed 2. Such as Figure 4 Shown.

[0031] 2. Immerse the sample exposing the interface reaction layer 2 into the etching solution of sulfuric acid hydrogen peroxide and water with a volume ratio of 2:1.5:0.1 until the interface reaction layer is completely removed and the ceramic substrate is exposed, such as Figure 5 Shown.

Embodiment 3

[0033] 1. The above steps are the same. At room temperature, the sample exposed to the solder layer 3 is immersed in a 1:1 volume ratio of nitric acid and hydrogen peroxide etching solution to react until the solder layer 3 is completely removed, until the interface reaction is exposed Layer 2, such as Figure 4 Shown.

[0034] 2. Immerse the sample exposing the interface reaction layer 2 into the etching solution of sulfuric acid hydrogen peroxide and water with a volume ratio of 1:1:0.1 until the interface reaction layer is completely removed and the ceramic substrate is exposed, such as Figure 5 Shown.

[0035] In this embodiment, the temperature has little effect on the etching, and a large amount of heat is released during the reaction, and the reaction is preferably carried out at a normal temperature of 15-30°C.

[0036] In this embodiment, the aluminum nitride ceramic substrate is prepared using silver-copper-titanium active solder. After brazing, the alloy solder layer is ...

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Abstract

The invention relates to an aluminum nitride ceramic substrate line etching method. The aluminum nitride ceramic substrate is an active brazing ceramic substrate, the etching is carried out in two steps, the alloy brazing filler metal layer is etched in the first step, and the interface reaction layer of the brazing filler metal and the ceramic is etched in the second step. In the first step, theetching solution is composed of nitric acid and hydrogen peroxide, wherein the volume ratio of nitric acid to hydrogen peroxide is 0.3-2: 0.8-1.5, the mass concentration of the nitric acid is 65%-70%, and the mass concentration of the hydrogen peroxide is 20%-40%. In the second step, the etching solution is composed of sulfuric acid, hydrogen peroxide and water, wherein the volume ratio of sulfuric acid to hydrogen peroxide is 0.5-2: 0.3-1.5:0.1, the mass concentration of the sulfuric acid is 98%, and the mass concentration of the hydrogen peroxide is 20%-40%. According to the invention, a novel formula etching solution is adopted, the brazing layer and the interface reaction layer of the active brazing heat dissipation substrate can be selectively removed, the etching rate is high, and high-precision and efficient etching of the ceramic substrate is realized.

Description

Technical field [0001] The invention relates to an etching method for aluminum nitride ceramic substrate circuits, in particular to an etching solution and method for active alloy solder and its interface reaction layer. Background technique [0002] The active brazing aluminum nitride ceramic substrate is a package substrate obtained by vacuum brazing the conductive metal copper layer and the ceramic substrate. The active brazing heat dissipation substrate has a unique resistance to high and low temperature impact failure, and has become a new generation of semiconductors and new high-power The preferred packaging material for power electronic devices. The alloy solder is mainly composed of silver, copper and titanium. The active elements in the solder will chemically react with the ceramic substrate during high temperature brazing to generate complex compounds such as TiN and TiAl3. The alloy solder layer is mainly silver-based solid solution and Copper-based solid solution. ...

Claims

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Application Information

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IPC IPC(8): H05K3/06C23F1/18C23F1/30
CPCC23F1/18C23F1/30H05K3/067H05K2203/0502
Inventor 张珊珊杨会生高克玮颜鲁春庞晓露杨理航
Owner 北京漠石科技有限公司
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