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Solar-blind ultraviolet single-photon source and preparation method thereof

A single-photon source and sun-blind technology, applied to the structure of the active region and other directions, can solve the problem of no mature solution for single-photon sources

Active Publication Date: 2018-04-17
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There is no mature solution for the sun-blind ultraviolet band single photon source less than 280nm

Method used

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  • Solar-blind ultraviolet single-photon source and preparation method thereof
  • Solar-blind ultraviolet single-photon source and preparation method thereof
  • Solar-blind ultraviolet single-photon source and preparation method thereof

Examples

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Embodiment 1

[0023] An AlGaN quantum dot embedded nanowire sun-blind single photon source lying flat on the substrate, as follows figure 1 As shown, among them: 103 is Si substrate; 121 is p-type Al 0.6 Ga 0.4 N nanowires, length 500 nm, diameter 40 nm; 122 is i-type Al 0.6 Ga 0.4 N layer, thickness 20 nm; 123 is Al 0.4 Ga 0.6 N single quantum dots, composed of quantum disks, the diameter of the disk is the same as that of nanowires, which is 40 nm, and the thickness of quantum disks is 0.5 nm; 124 is n-type Al 0.6 Ga 0.4 N nanowires with a length of 500 nm and a diameter of 40 nm; 103 is a p-type Au / Ti electrode; 104 is an n-type Au / Ni electrode. This single quantum dot embedded nanowire structure is firstly grown on a GaN substrate by MOCVD, then peeled off and laid flat on a Si substrate, and then electrodes are made at both ends of the nanowire. This AlGaN quantum dot embedded nanowire sun-blind single photon source has a luminous wavelength of 270 nm, and the luminous direction...

Embodiment 2

[0025] A sun-blind single photon source for InAlN quantum dots embedded in InAlGaN thin films, as follows figure 2As shown, where: 201 is AlN substrate; 221 is p-type In 0.1 al 0.7 Ga 0.2 N thin film with a thickness of 200 nm; 222 is i-type In 0.1 al 0.7 Ga 0.2 N film, thickness 10 nm; 223 is In 0.25 al 0.75 N quantum dots, grown by MBE self-assembly, the quantum dots are 2 nm in height, 10 nm in diameter, and have a density of 10 8 / cm 2 ; 24 is n-type In 0.1 al 0.7 Ga 0.2 N film with a thickness of 100 nm; 203 is a p-type graphene electrode; 204 is an n-type Au / Ni electrode. In this structure, the quantum dot embedded pin film is grown, and then the mesa is etched to expose the p-type layer, and then the p-type graphene electrode and the n-type Au / Ni electrode are prepared on the mesa. This sun-blind single photon source with InAlN quantum dots embedded in InAlGaN film emits at a wavelength of 256 nm. The preparation process does not require electron beam lith...

Embodiment 3

[0027] A ZnMgO quantum dot embedded nanowire sun-blind single photon source perpendicular to the substrate, as follows image 3 As shown, among them: 301 is MgO substrate; 321 is p-type Zn 0.6 Mg 0.4 O nanowires, length 300 nm, diameter 50 nm; 322 is i-type Zn 0.6 Mg 0.4 O nanowires, length 10 nm, diameter 50 nm; 323 is Zn 0.4 Mg 0.6 O quantum dots, the thickness is 2 atomic layers, the diameter is consistent with the nanowire, which is 50 nm; 324 is n-type Zn 0.6 Mg 0.4 O nanowire, length 100 nm, diameter 50 nm; 3 is p-type graphene electrode; 304 is n-type Au / Ni electrode; 305 is p-type Zn 0.6 Mg 0.4 O thin film; 306 is SOG. This structure was prepared by the Top-down method. Zn 0.6 Mg 0.4 O / Zn 0.4 Mg 0.6 O / Zn 0.6 Mg 0.4 O single quantum well is etched into a nanowire with a diameter of 50 nm to form a quantum dot embedded nanowire structure, and then the gap around the nanowire is filled with SOG, and then SOG is etched into a mesa to expose the underlying p-...

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Abstract

The invention discloses a solar-blind ultraviolet single-photon source and a preparation method thereof. The solar-blind ultraviolet single-photon source includes a wide bandgap semiconductor p type layer, an i type intrinsic layer, a single quantum dot and a quantum dot embedded pin nanowire or a quantum dot embedded pin membrane composed of a n type layer. The width of a bandgap of a quantum dotin a pin structure is larger than 4.43 electron volts, the pin structure uses a semiconductor material of which the bandgap width is larger than the quantum dot, and thus a class quantum well structure is formed to enhance limitations on the single quantum dot. The solar-blind ultraviolet single-photon source is suitable for both excitation ways of optical pumping and electric pumping and can emit vertical to a substrate and can also emit parallel to the substrate, and hence the solar-blind ultraviolet single-photon source can be not only applied to a free space single-photon source but alsoapplied to an integrated single-photon source on a chip; the emission wavelength of the solar-blind ultraviolet single-photon source is in a solar-blind wave band smaller than 280 nm, and the wide bandgap quantum dot is suitable for room temperature single-photon emission even for high-temperature single-photon emission and can be broadly applied to the relevant fields of quantum information, quantum calculation, quantum imaging, quantum verification, near field secure communication and quantum precision measurement.

Description

technical field [0001] The invention relates to the fields of single photon source, quantum secure communication and quantum information, in particular to a sun-blind ultraviolet single photon source and a preparation method thereof. Background technique [0002] A single photon source is a light source that can generate photons in a quantum state. It is an important means to realize quantum information technologies such as quantum communication, quantum model, quantum computing, and quantum storage. At present, these fields of quantum information usually use single-photon sources in the visible and near-infrared bands. Since natural light and artificial light sources are generally in the visible band, and thermal radiation is in the infrared band, the single photon sources in the current field are greatly disturbed by the background in the application. [0003] The solar-blind ultraviolet band is the band with wavelengths less than 280 nm. In this band, sunlight is strong...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/32
CPCH01S5/32Y02P70/50
Inventor 陈飞良李沫李倩张晖黄锋李舒啸张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
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