A method of manufacturing a semiconductor device

Abstract

The invention provides a manufacturing method for a semiconductor device. The method comprises the steps: providing a semiconductor substrate; forming a hard mask layer on the semiconductor substrate;carrying out the patterning of the hard mask layer and the semiconductor substrate, so as to form a shallow trench; forming silicon thin film layers on the hard mask layer and on the bottom and sidewalls of the shallow trench; carrying out the oxygen doping of the part, located on the top side wall of the shallow trench, of the silicon thin film layers, so as to form a silicon oxide film; carrying out the pretreatment of the silicon oxide film on the top side wall of the shallow trench and the non-doped silicon thin film layers on the bottom and side walls of the shallow trenches; and placing oxide in the shallow trench after pretreatment. After the above processing, the method enables the vertical growth rate of the oxide at the bottom of the shallow trench in a vertical direction to befar greater than the lateral growth rate of the oxide on the top side wall of the shallow trench in a horizontal direction, thereby effectively solving a hole problem in STI gap filling.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for manufacturing a semiconductor device. Background technique [0002] As the feature size of integrated circuit devices becomes smaller and smaller, Shallow Trench Isolation (STI) technology has gradually replaced the traditional Local Oxygen Isolation of Silicon (LOCOS) technology to meet the needs of semiconductor development with smaller size and higher integration. STI technology is a process method that forms shallow trenches on a semiconductor substrate and fills the shallow trenches with dielectric materials. As the size limit becomes smaller and smaller, the STI gap-fill process becomes more and more demanding. Currently, high density plasma chemical vapor deposition (HDPCVD) process and high aspect ratio (HARP) oxide filling process are used to fill shallow trenches. [0003] The above two filling processes tend to form voids in the top region of the ...

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Problems solved by technology

[0003] The above two filling processes tend to form voids in the top area of ​​shallow trenches during the filling process. Due to the existence of voids, the subsequent wet process will lead to the exposure of voids, and at the same time, the STI step height cannot be controlled.

[0004] Therefore, a method for improving STI gap filling is proposed to improve the phenomenon of voids when filling shallow trench gaps

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