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Preparation method of cu-in-ga-se compound rotary target

A cu-in-ga-se, rotating target technology, applied in metal material coating process, vacuum evaporation plating, coating and other directions, can solve the problems of uneven target density and high cost, achieve uniform internal density, Low production cost and uniform texture

Active Publication Date: 2020-09-01
BAOTOU RES INST OF RARE EARTHS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the method of preparing the target is costly, the density of the target is not uniform enough, the cost is high, and the material utilization rate does not exceed 40%.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0022] The preparation method of the Cu-In-Ga-Se compound rotating target material, the specific steps are as follows:

[0023] Step 1: Use the non-magnetic pipe as the substrate to prepare Cu-In-Ga-Se powder, wherein the molar ratio of copper, indium, gallium, and selenium in the Cu-In-Ga-Se powder is 1:(0.3~2 ):(0.1~1):(1~3);

[0024] Non-magnetic pipe fittings are made of non-magnetic stainless steel tube, metal copper tube, metal titanium tube, nickel-chromium tube or nickel-aluminum tube. , cleaning, drying and other pretreatments.

[0025] The average particle size of Cu-In-Ga-Se powder is 1-5μm, the purity is between 99.9%-99.999%, other elements are impurities, the total content of impurities is less than 1000ppm, and the single impurity element is less than 500ppm.

[0026] Step 2: Use supersonic cold spraying technology to spray on the outer surface of the pretreated substrate, and the thickness of the deposited layer does not exceed 20mm; then use cold isostatic p...

Embodiment 1

[0032] A method for preparing a Cu-In-Ga-Se compound rotating target, specifically comprising the following steps:

[0033] (1) Prepare non-magnetic stainless steel pipes, the size of which is processed to meet the requirements of use, and the two ends are processed into screw buckles for connection as required, and the surface is pretreated by sandblasting, cleaning, and drying;

[0034] (2) batching, prepare Cu-In-Ga-Se powder, the mol ratio of copper, indium, gallium, selenium in its powder is 1:0.7:0.3:2;

[0035] (3) Under the nitrogen protective atmosphere, the powder feeding device sends the Cu-In-Ga-Se powder to the supersonic cold spraying technology gun. When the non-magnetic stainless steel tube keeps rotating, the high-speed airflow sends the Cu-In-Ga-Se powder -Se powder is sprayed on the surface of the substrate layer by layer according to the scanning method, each layer is 2 μm, until the accumulation of Cu-In-Ga-Se layer reaches 7mm, and cooled to room temperat...

Embodiment 2

[0040] A method for preparing a Cu-In-Ga-Se compound rotating target, specifically comprising the following steps:

[0041] (1) Prepare metal copper pipes, the size of which is processed to meet the requirements of use, and the two ends are processed into screw buckles for connection as required, and the surface is subjected to pretreatment such as sandblasting, cleaning, and drying;

[0042] (2) batching, prepare Cu-In-Ga-Se powder, the mol ratio of copper, indium, gallium, selenium in its powder is 1:0.35:0.15:1.25;

[0043] (3) Under the helium protective atmosphere, the powder feeding device sends the Cu-In-Ga-Se powder to the supersonic cold spraying technology gun. When the metal copper tube keeps rotating, the high-speed airflow sends the Cu-In-Ga-Se powder -Se powder is sprayed on the surface of the substrate layer by layer in a scanning manner, each layer is 4 μm, until the accumulation of Cu-In-Ga-Se layer reaches 11mm, and cooled to room temperature, wherein the gas...

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Abstract

The invention discloses a preparation method for a Cu-In-Ga-Se compound rotating target material. The preparation method comprises the steps that a non-magnetic pipe fitting serves as a base body, andCu-In-Ga-Se powder is prepared, wherein the molar ratio of copper to indium to gallium to selenium in the Cu-In-Ga-Se powder is 1: (0.3-2): (0.1-1):(1-3); a supersonic speed cold spraying technologyis adopted for spraying the Cu-In-Ga-Se powder to the outer surface of the pretreated base body, the thickness of a settled layer is not larger than 20 mm, and an isostatic cool pressing technology isadopted for further improving the density; and a rotating target material blank of the corresponding texture structure is obtained through high-temperature sintering, and the rotating target materialblank is treated to obtain the rotating target material. The intern density of the Cu-In-Ga-Se material obtained through the method is even, good plating films are better formed, and the defective percentage of a solar energy product is reduced.

Description

technical field [0001] The invention relates to a photoelectric material technology, in particular to a method for preparing a Cu-In-Ga-Se compound rotary target. Background technique [0002] After nearly 20 years of development, solar cells have developed from silicon crystal systems to compound thin films. The light conversion efficiency of the silicon crystal system has reached more than 17% at present, but its manufacturing cost is high. In the early stage, the whole industry consumed a lot of energy due to the preparation of polysilicon and single crystal silicon, which had a great impact on the environment. In the process of thin-film solar cells, Cu-In-Ga-Se compounds are used as one of the targets for magnetron sputtering coating, which makes the production of solar cells simpler, lower in investment costs, lower in production costs, and lower in final product costs. lower. [0003] At present, the market demand for target materials in China and the Asia-Pacific ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/35C23C14/34C23C14/06
CPCC23C14/0623C23C14/3414C23C14/35
Inventor 李慧孙良成李静雅鲁飞刘树峰刘小鱼成宇娄树普温永清
Owner BAOTOU RES INST OF RARE EARTHS
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