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Terahertz waveband medium material, preparation method and method of preparing dielectric medium therefrom

A dielectric material and terahertz technology, applied in the field of communication, can solve the problems of high sintering temperature and high dielectric loss, and achieve the effect of low sintering temperature, low dielectric loss and moderate dielectric constant

Inactive Publication Date: 2018-04-06
LIUPANSHUI NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the dielectric materials that can be applied in the terahertz band still have the disadvantages of high dielectric loss and high sintering temperature.

Method used

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  • Terahertz waveband medium material, preparation method and method of preparing dielectric medium therefrom
  • Terahertz waveband medium material, preparation method and method of preparing dielectric medium therefrom
  • Terahertz waveband medium material, preparation method and method of preparing dielectric medium therefrom

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Embodiment 1

[0031]Example 1. A terahertz band dielectric material, the stoichiometric formula of the dielectric material is [(Mg 1- x Al 2 / 3x ) 1 / 3 Nb 2 / 3 ]O 2 + ywt% ABSMV; where 0≤x≤0.3, y=1 or 2.

[0032] The aforementioned terahertz band dielectric material is prepared according to the following steps:

[0033] a, the raw material Al 2 o 3 , MgCO 3 and Nb 2 o 5 According to the stoichiometric general formula [(Mg 1-x Al 2 / 3x ) 1 / 3 Nb 2 / 3 ]O 2 Ingredients mixed, where 0≤ x ≤0.3, product A is obtained;

[0034] b. Mix product A, balls and water according to the volume ratio of 1:1:1, then ball mill for 3~5 hours to get product B;

[0035] c, drying the B product, and passing through a 40-80 mesh sieve (optimum 60 mesh sieve), to obtain the C product;

[0036] d. Put product C in the air at 1200±5 o C is pre-fired for 2-6 hours to obtain product D;

[0037] e. Al 2 o 3 , B 2 o 3 , SiO 2 , MgO and V 2 o 5 Mix according to the weight ratio of 2:7:8:1:2 to get...

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Abstract

The invention discloses a terahertz waveband medium material, a preparation method and a method of preparing a dielectric medium therefrom. The chemical formula of the medium material is [(Mg<1 x>Al<2 / 3x>)<1 / 3>Nb<2 / 3>]O<2> + y wt% ABSMV, 0<=x<=0.3, and y=1 or 2. The medium material has the advantages of low sintering temperature, low dielectric loss, and moderate dielectric constant.

Description

technical field [0001] The invention relates to a material and a preparation method used in the communication field, in particular to a terahertz band dielectric material, a preparation method and a method for making a dielectric. Background technique [0002] With the rapid development of wireless communication in the era of big data, it is technically required that wireless communication devices have the characteristics of continuous development in the direction of high frequency (microwave, terahertz wave) and high gain (or low insertion loss). Based on this, communication devices such as dielectric antennas and filters require that the dielectric loss of the dielectric in the microwave or terahertz band should be low, and its dielectric constant should be moderate to meet the above requirements. However, the dielectric materials that can be used in the terahertz band still have the disadvantages of high dielectric loss and high sintering temperature. Contents of the in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/495C04B35/626C04B35/622C03C12/00
CPCC03C12/00C04B35/495C04B35/622C04B35/6261C04B35/62675C04B2235/3206C04B2235/3217C04B2235/3251C04B2235/365C04B2235/656C04B2235/96
Inventor 胡明哲曾志伟尹跃
Owner LIUPANSHUI NORMAL UNIV
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