Lateral double diffused metal oxide semiconductor field effect transistor with potential floating field plate
An oxide semiconductor and lateral double-diffusion technology, which is applied in the direction of semiconductor devices, circuits, electrical components, etc., can solve the problems of inability to uniform surface electric field distribution of devices, inability to adjust device current capacity, etc.
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[0020] refer to figure 1 , a lateral double-diffused metal oxide semiconductor field effect transistor with a potential floating type field plate, comprising: a P-type semiconductor substrate 1, an N-type drift region 2 and a P-type well 3 are arranged on the P-type semiconductor substrate 1, An N-type source region 4 and a P-type contact region 5 are arranged on the P-type well 3, an N-type drain region 6 and a field oxide layer 7 are arranged on the N-type drift region 2, and a part of the N-type drift region 2 and a part of the P-type A gate oxide layer 8 is arranged above the type well 3, and one end of the gate oxide layer 8 is against the boundary of the N-type source region 4, and the other end of the gate oxide layer 8 is against the boundary of the field oxide layer 7. In the gate oxide layer 8 is provided with a polysilicon gate 9, and the polysilicon gate 9 extends to the top of the field oxide layer 7, in part of the P-type well 3, the P-type contact region 5, the...
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