Titanium nitride atomic layer deposition device and deposition method thereof

Abstract

The invention discloses a titanium nitride atomic layer deposition device and a deposition method thereof. According to the deposition method thereof, segmented gradient heat-up heating is carried outon a source bottle outlet pipeline and a titanium precursor conveying pipeline, segmented gradient heat-down heating is carried out on a front-stage pipeline, an oxidant blowing pipeline is directlyconnected into a vacuum pump without passing through a chamber, during the ALD reaction, a preprocessing before the process is carried out through the operation that the flow ratio between an oxidizing agent and a titanium precursor vapor is improved, the chamber and the pipeline are vacuumized for multiple times, so that the generation of particles in the chamber, especially in the front-stage pipeline can be reduced, the maintenance period of the vacuum pump can be prolonged, and the service life can be prolonged; residuals of the precursor and the oxidizing agent on the wall of the pipelineand in the cavity can be effectively removed, the occurrence of unexpected reactions is reduced, and the impurity pollution is reduced; and purity of a thin film can be improved, and a complex gas processing system is prevented from being arranged.

Description

Technical field [0001] The present invention relates to the technical field of semiconductor processing, and more specifically, to a titanium nitride atomic layer deposition device and a deposition method thereof. Background technique [0002] Titanium nitride (TiN) is used as a coating for cutting tools because of its high hardness, high melting point, and good thermal and chemical stability. In addition, titanium nitride has become a versatile material in the IC field due to its good electrical conductivity, good thermal stability and mechanical properties of the film. Such as the Cu diffusion barrier layer (copper diffusion barrier), the gate electrode of CMOS diodes and DRAM capacitor components. [0003] PVD and CVD methods are the main methods for depositing TiN films. However, studies have shown that, compared with TiN films deposited by PVD and CVD methods, TiN films deposited by atomic layer deposition (ALD) methods have better step coverage. In particular, with the red...

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Problems solved by technology

[0006] Titanium tetrachloride has very good thermal stability and its high vapor pressure can be volatilized at room temperature, and the deposited film resistance is low

[0016] 1) Due to the short purge time after the precursor titanium tetrachloride and the oxidant ammonia pulse into the chamber in the ALD reaction, a small amount of titanium tetrachloride and ammonia may remain in their respective pipelines, especially in the In spaces such as the chamber wall, unexpected reactions occur that cause contamination of the chamber and substrate surfaces

[0017] 2) Precursor and oxidant vapor may also react to form a film at the edge of the substrate, especially the lower part of the substrate, causing contamination of the edge and lower part of the substrate, and eventually contaminating the substrate surface and other parts of the chamber

[0018] 3) Some of the pipelines from the outlet of the source bottle to the chamber have no heating function, and some can be heated but the set temperature remains the same; and once the titanium tetrachloride vapor encounters the At the cold point, it may be partially accumulated, adsorbed or even condensed, especially in the section from the hand valve MV3 at the outlet of the source bottle to the pneumatic valve PV3.

These problems may be specific to specific feedstock gases, reactions and process conditions used, so solutions to such problems in one deposition system may not be effective or even completely ineffective in another system

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