Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of two-dimensional crystal black phosphorene

A technology of two-dimensional crystal and black phosphorene, which is applied in the field of preparation of two-dimensional crystal black phosphorene, can solve the problem of low electron mobility and achieve the effect of simple preparation process, high yield and mild conditions

Inactive Publication Date: 2018-03-09
SHAANXI YIPINDA PETROCHEM CO LTD
View PDF0 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Transition metal dichalcogenide (TMD) is a two-dimensional material proposed in recent years. Its bulk is an indirect band gap semiconductor, and a single atomic layer can become a direct band gap semiconductor, but its electron mobility is low. it is good

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The preparation method of a kind of two-dimensional crystal black phosphorene described in the present invention comprises the following preparation steps:

[0020] (1) Take red phosphorus, silver zinc oxide and tin tetraiodide for use; the mass ratio of red phosphorus, Sn and SnI is 3:40:1;

[0021] (2) After fully mixing red phosphorus, silver zinc oxide and tin tetraiodide, they are sealed together in a quartz tube with an inner diameter of 10mm, and placed in a single-temperature zone furnace to raise the temperature to 600°C and keep the temperature constant for 20h;

[0022] (3) After cooling the single-temperature zone furnace to 500°C at a cooling rate of 40-80°C per hour, quickly drop to room temperature within 4 hours, vacuumize until the pressure is less than 0.05Pa, and then seal the tube;

[0023] (4) Heat the temperature of the raw material end in the quartz tube to 200°C, then raise the temperature to 600°C for 1 hour, then keep it for 5 hours, then cool ...

Embodiment 2

[0025] The preparation method of a kind of two-dimensional crystal black phosphorene described in the present invention comprises the following preparation steps:

[0026] (1) Take red phosphorus, silver zinc oxide and tin tetraiodide for use; the mass ratio of red phosphorus, Sn and SnI is 5:20:1.5;

[0027] (2) After fully mixing red phosphorus, silver zinc oxide and tin tetraiodide, they are sealed together in a quartz tube with an inner diameter of 10mm, and placed in a single-temperature zone furnace to raise the temperature to 500°C and keep the temperature constant for 28 hours;

[0028] (3) After cooling the single-temperature zone furnace to 400°C at a cooling rate of 40-80°C per hour, quickly drop to room temperature within 4 hours, vacuumize until the pressure is less than 1.0Pa, and then seal the tube;

[0029] (4) Heat the temperature of the raw material end in the quartz tube to 200°C, then raise the temperature to 800°C for 1 hour, then keep it for 8 hours, then...

Embodiment 3

[0031] The preparation method of a kind of two-dimensional crystal black phosphorene described in the present invention comprises the following preparation steps:

[0032] (1) Take red phosphorus, silver zinc oxide and tin tetraiodide for use; the mass ratio of red phosphorus, Sn and SnI is 5:20:1.5

[0033] (2) After fully mixing red phosphorus, silver zinc oxide and tin tetraiodide, they are sealed together in a quartz tube with an inner diameter of 10mm, and placed in a single-temperature zone furnace to raise the temperature to 600°C and keep the temperature constant for 23 hours;

[0034] (3) After cooling the single-temperature zone furnace to 500°C at a cooling rate of 60°C per hour, quickly drop to room temperature within 4 hours, vacuumize until the pressure is less than 0.05Pa, and then seal the tube;

[0035] (4) Heat the temperature of the raw material end in the quartz tube to 200°C, then raise the temperature to 800°C for 1 hour, then keep it for 8 hours, then co...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a preparation method of two-dimensional crystal black phosphorene. A preparation method of two-dimensional crystal black phosphorene, which is characterized in that it comprises the following preparation steps: taking red phosphorus, silver zinc oxide and tin tetraiodide for subsequent use; taking red phosphorus, silver zinc oxide and tin tetraiodide and fully mixing them, Sealed together in a quartz tube with an inner diameter of 10mm, placed in a single-temperature zone furnace to raise the temperature to 400-800°C and keep the temperature constant for 15-40h; the preparation method of the two-dimensional crystal black phosphorene of the present invention has simple preparation process, mild conditions, High Yield.

Description

technical field [0001] The invention relates to a preparation method of two-dimensional crystal black phosphorene. Background technique [0002] Two-dimensional crystals are nanometer-thick planar crystals stacked by several layers of monoatomic layers. They have unique electrical, optical, and magnetic properties, and have their own unique structural advantages. Therefore, common two-dimensional materials such as graphene, Silene, molybdenum disulfide, and black phosphorene have all received widespread attention from scientists. Graphene has shown excellent characteristics in many fields, and its high electron mobility has a good application prospect. However, there is no band gap between the valence band and the conduction band of graphene. The existence of the band gap enables the material to realize the on and off of electron flow, which is the key to electrical applications. Moreover, graphene is not compatible with silicon (phase with silicon [0003] Capacitance is...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01B25/02
CPCC01B25/02
Inventor 李长英
Owner SHAANXI YIPINDA PETROCHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products