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Method for depositing metal elementary substance thin film by atmospheric cold plasmas

A cold plasma, metal deposition technology, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve the problem that the study of metal element thin film has not yet been reported, and meet the requirements of reducing volatility and stability , The effect of low reaction temperature and no need for annealing treatment

Inactive Publication Date: 2018-01-26
CHANGAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, atmospheric pressure cold plasma technology has been applied to the preparation of oxide films, but the research on the preparation of simple metal thin films has not been reported.

Method used

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  • Method for depositing metal elementary substance thin film by atmospheric cold plasmas
  • Method for depositing metal elementary substance thin film by atmospheric cold plasmas
  • Method for depositing metal elementary substance thin film by atmospheric cold plasmas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] This embodiment includes the following steps:

[0040]Step 1, open the first valve 3 and the second valve 4, so that ammonia and nitrogen enter the gas mixing proportioner 5 through the first intake pipe 1 and the second intake pipe 2 respectively, and the gas is mixed according to the volume of 8:92 Perform equal pressure mixing to form a mixed gas with a pressure of 0.25MPa, then transport the mixed gas to the plasma torch 10 through the gas transport pipeline 6, adjust the output power of the plasma power supply 7 to 400W, and discharge the mixed gas at the electrode 9 Ionize under excitation to generate cold jet plasma at normal pressure, and the cold jet plasma at normal pressure forms a plasma flame in the cavity 12 of the nozzle 11;

[0041] Step 2, copper nitrate is mixed with the solution that concentration is 150g / L, is placed in atomization chamber 16, opens the 3rd valve 17, and nitrogen enters in the atomization chamber 16 through the 3rd inlet pipe 18, and...

Embodiment 2

[0048] This embodiment includes the following steps:

[0049] Step 1, open the first valve 3 and the second valve 4, so that ammonia and argon enter the gas mixing proportioner 5 through the first inlet pipe 1 and the second inlet pipe 2 respectively, and according to the ratio of 8:92 The volume ratio is mixed at equal pressure to form a mixed gas with a pressure of 0.35MPa, and then the mixed gas is transported to the plasma torch 10 through the gas transportation pipeline 6, and the output power of the plasma power supply 7 is adjusted to be 400W. Ionization under the excitation of the discharge generates atmospheric pressure radio frequency cold plasma, and the atmospheric pressure radio frequency cold plasma forms a plasma flame in the cavity 12 of the nozzle 11;

[0050] Step 2, dissolving bis(hexafluoroacetylacetonate) copper in ethyl acetate to prepare a solution with a concentration of 1.4mol / L, placing it in the atomization chamber 16, closing the third valve 17, and...

Embodiment 3

[0053] This embodiment includes the following steps:

[0054] Step 1, open the first valve 3 and the second valve 4, so that ammonia and argon enter the gas mixing proportioner 5 through the first inlet pipe 1 and the second inlet pipe 2 respectively, and according to the ratio of 3:7 The volume ratio is mixed at equal pressure to form a mixed gas with a pressure of 0.80 MPa, and then the mixed gas is transported to the plasma torch 10 through the gas transportation pipeline 6, and the output power of the plasma power supply 7 is adjusted to be 400W. Ionization under the excitation of the discharge generates atmospheric pressure jet flow cold plasma, and the atmospheric pressure jet flow cold plasma forms a plasma flame in the cavity 12 of the nozzle 11;

[0055] Step 2, zinc nitrate is mixed with the solution that concentration is 100g / L, is placed in atomization chamber 16, opens the 3rd valve 17, and nitrogen enters in the atomization chamber 16 through the 3rd inlet pipeli...

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Abstract

The invention discloses a method for depositing a metal elementary substance thin film by atmospheric cold plasmas. The method comprises the following steps:step 1, mixed gas is excited and ionized togenerate the atmospheric cold plasmas, and the atmospheric cold plasmas form plasma light flame in a cavity of a nozzle; step 2, a metal compound solution is atomized and then enters the cavity of the nozzle; and step 3, under surrounding protection of the protective gas, the plasma light flame and fog drops generate action, solvent in the fog drops is evaporated, a metal compound in the fog drops is reduced into metal particles, and the metal particles are sprayed onto a substrate to be deposited to form the continuous metal elementary substance thin film. According to the method, the metalelementary substance thin film can be deposited under normal pressure, reaction temperature is low, the method is suitable for a heat sensitive substrate, a vacuum or closed deposition chamber is notneeded, so that the size of the substrate is not limited by space, and application range of the method is expanded; and the metal elementary substance thin film prepared by the method is stable in property, post-processing is not needed, so that the technological process is shortened, and production efficiency is improved.

Description

technical field [0001] The invention belongs to the technical field of thin film deposition, and in particular relates to a method for depositing simple metal thin films by normal-pressure cold plasma. Background technique [0002] When the size of the metal thin film material is reduced to the microscopic scale close to the quantized motion, many new physical phenomena will be displayed, which will help the further miniaturization of microelectronic devices and systems, and different metal materials can be combined to form excellent The complex material system with unique properties has broad application prospects in the fields of material science, electromagnetism, and life science. At present, the main methods for the preparation of metal thin films are physical vapor deposition (PVD), chemical vapor deposition (CVD), electrodeposition and chemical deposition. During the preparation process of electrodeposition and chemical deposition, a large amount of chemical waste li...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/06C23C16/513
Inventor 郝建民刘向辉陈宏陈永楠
Owner CHANGAN UNIV
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