A kind of preparation method of high-purity strong dense max phase coating
A coating and dense technology, which is applied in the field of preparation of high-purity, strong and dense MAX phase coatings, can solve the problems of reducing the application economy of MAX phase coatings, the difficulty of making MAX phase composite targets, and the unfavorable application of MAX phase coatings. It is easy to uniformly deposit large areas, facilitates industrial applications, and has low cost effects
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Embodiment 1
[0037] (1) Put the cleaned and dried substrate into the vacuum cavity.
[0038] (2) Introduce 40 sccm of argon gas into the vacuum chamber, set the current of the linear anode ion source to 0.2A, and the substrate negative bias voltage to -150V, and use the ionized argon ions to etch the substrate for 20 minutes.
[0039](3) The Ti transition layer was deposited by arc ion plating technology, the sputtering current was 60A, the Ar flow rate was 200sccm, the gas pressure was 1.0Pa, and the deposition thickness was 350nm.
[0040] (4) The TiN diffusion barrier was deposited by arc ion plating technology, the sputtering current was 60A, N 2 The flow rate is 500 sccm, the gas pressure is 5.0 Pa, and the deposition thickness is 500 nm.
[0041] (5) The Ti-Al-N coating is deposited by arc composite magnetron sputtering technology, the arc target is Ti target, the magnetron sputtering target is Al target, the substrate is placed between the arc and the magnetron sputtering target, a...
Embodiment 2
[0058] (1) Put the cleaned and dried substrate into the vacuum chamber.
[0059] (2) Introduce 40 sccm of argon gas into the vacuum chamber, set the current of the linear anode ion source to 0.2A, and the substrate negative bias voltage to -150V, and use the ionized argon ions to etch the substrate for 20 minutes.
[0060] (3) The Cr transition layer was deposited by arc ion plating technology, the sputtering current was 60A, the Ar flow rate was 200sccm, the gas pressure was 1.0Pa, and the deposition thickness was 350nm.
[0061] (4) The CrN diffusion barrier was deposited by arc ion plating technology, the sputtering current was 60A, N 2 The flow rate is 500 sccm, the gas pressure is 5.0 Pa, and the deposition thickness is 500 nm.
[0062] (5) The Cr-Al-C coating is deposited by arc composite magnetron sputtering technology, the arc target is Ti target, the magnetron sputtering target is Al target, the substrate is placed directly in front of the magnetron sputtering target...
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