Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon nitride ceramic slurry and preparation method of porous silicon nitride ceramic

A silicon nitride ceramic and slurry technology, applied in the field of 3D printing, can solve the problems of high cost, low porosity and limited shape of parts by gel injection molding method, and achieve simple optimization of the preparation process, controllable pore size, and size. high precision effect

Active Publication Date: 2017-12-22
GUANGDONG UNIV OF TECH
View PDF4 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there are many problems in the above method: the porosity of the process of adding pore-forming agent is low, the distribution of pores is uneven, and the foaming process conditions are complicated and difficult to control; the cost of gel injection molding is high, and the shape of parts is limited, so complex shapes cannot be realized preparation of

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nitride ceramic slurry and preparation method of porous silicon nitride ceramic
  • Silicon nitride ceramic slurry and preparation method of porous silicon nitride ceramic
  • Silicon nitride ceramic slurry and preparation method of porous silicon nitride ceramic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] (1) Preparation of slurry: Mix 30g of polysilylazane liquid, 50g of silicon nitride powder and 3g of sintering aid, then add 10g of photocurable resin and 0.5g of photoinitiator and place them in a ball mill for ball milling to obtain a slurry 1.

[0030] In this embodiment, the photocurable resin is a mixture of 1,6-hexanediol diacrylate (HDDA) and pentaerythritol tetraacrylate (PETTA), and the mixing mass ratio is 1:1;

[0031] Sintering aid is Al 2 o 3 and Ce 2 o 3 , the mixing mass ratio is 1:1;

[0032] The photoinitiator is phenylbis(2,4,6-trimethylbenzoyl)phosphine oxide (819).

[0033] (2) Molding: the slurry 1 is placed in a photocuring molding device and subjected to photocuring treatment, and a molded green body 1 is obtained according to a preset model shape.

[0034] In this embodiment, the thickness of the single layer is controlled to be 20 μm, and the exposure amount is 200 mJ / cm 2 .

[0035] (3) Degreasing and sintering: place the molded green b...

Embodiment 2

[0038] (1) Preparation of slurry: Mix 30g of polyazide silane liquid, 83g of silicon nitride powder and 9g of sintering aid, then add 40g of photocurable resin, 0.6g of photoinitiator and 0.9g of dispersant and place in a ball mill for ball milling Mix to obtain slurry 2.

[0039] In this embodiment, the photocurable resin is a mixture of 1,6-hexanediol diacrylate (HDDA) and pentaerythritol tetraacrylate (PETTA), and the mixing mass ratio is 2:1;

[0040] Sintering aid is Al 2 o 3 and Ce 2 o 3 , the mixing mass ratio is 1:1;

[0041] The photoinitiator is (2,4,6-trimethylbenzoyl)diphenylphosphine oxide (TPO);

[0042] The dispersant is BYK163.

[0043](2) Molding: the slurry 2 is placed in a photocuring molding device and subjected to photocuring treatment, and a molded green body 2 is obtained according to a preset model shape.

[0044] In this embodiment, the thickness of the single layer is controlled to be 20 μm, and the exposure amount is 120 mJ / cm 2 .

[0045] (...

Embodiment 3

[0048] (1) Preparation of slurry: Mix 30g of polyazirane liquid, 14.5g of silicon nitride powder and 2.5g of sintering aid, then add 7g of photocurable resin, 0.2g of photoinitiator and 0.2g of dispersant and place it in a ball mill Mix by ball milling to obtain slurry 3.

[0049] In this embodiment, the photocurable resin is a mixture of trimethylolpropane triacrylate (TMPTA) and pentaerythritol triacrylate (PETA), and the mixing mass ratio is 3:1;

[0050] Sintering aid is Al 2 o 3 and La 2 o 3 , the mixing mass ratio is 1:2;

[0051] The photoinitiator is 819;

[0052] The dispersants are BYK163 and BYK9077, and the mixing mass ratio is 1:1.

[0053] (2) Molding: the slurry 3 is placed in a photocuring molding device and subjected to photocuring treatment, and a molded green body 3 is obtained according to a preset model shape.

[0054] In this embodiment, the thickness of the single layer is controlled to be 50 μm, and the exposure amount is 300 mJ / cm 2 .

[0055]...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
porosityaaaaaaaaaa
porosityaaaaaaaaaa
porosityaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the technical field of 3D printing and particularly relates to silicon nitride ceramic slurry and a preparation method of porous silicon nitride ceramic. The silicon nitride ceramic slurry contains the following components in parts by weight: 30 parts of polysilazane liquid, 14.5-83 parts of silicon nitride powder, 2.5-9 parts of a sintering aid, 7-40 parts of light-cured resin, 0.2-0.6 part of a photoinitiator and 0-0.9 part of a dispersing agent. The invention further provides a preparation method of the porous silicon nitride ceramic. The preparation method comprises the steps of sequentially carrying out photocuring formation, degreasing and sintering on the silicon nitride ceramic slurry. The porous silicon nitride ceramic prepared by virtue of the scheme has the beneficial effects that the porosity and the pore sizes are controllable, the pores are uniformly arrayed, the dimensional precision and the formation efficiency are high, a preparation process is simple and optimal, and the application of the porous silicon nitride ceramic in the fields of medical treatment, chemical engineering and electrons can be promoted.

Description

technical field [0001] The invention belongs to the technical field of 3D printing, and in particular relates to a method for preparing silicon nitride ceramic slurry and porous silicon nitride ceramics. Background technique [0002] Silicon nitride has been widely concerned because of its excellent comprehensive mechanical properties, good high-temperature mechanical properties, thermal stability, and thermal shock resistance. Porous silicon nitride ceramic materials are currently a research hotspot. Porous silicon nitride ceramics have the characteristics of high porosity, low dielectric constant, and excellent dielectric properties, and play a special role in aerospace and other fields. [0003] At present, the main methods for preparing porous ceramics mainly include adding pore-forming agents and gel injection molding methods, etc., such as Chinese patent ZL201110366340.2 (porous silicon nitride ceramics and its preparation method) announced a A method for preparing po...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B38/06C04B35/589C04B35/591C04B35/638
CPCC04B35/589C04B35/591C04B35/638C04B38/067C04B2235/3217C04B2235/3227C04B2235/3229C04B2235/46C04B2235/465C04B2235/6562C04B2235/6567C04B2235/661
Inventor 伍尚华黄容基蒋强国伍海东吴子薇
Owner GUANGDONG UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com