A kind of igbt silicon wafer back annealing method and laser annealing system

A technology of laser annealing and silicon wafers, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems that silicon-based surface annealing cannot meet customer needs, etc.

Active Publication Date: 2020-10-16
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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  • Application Information

AI Technical Summary

Problems solved by technology

[0007] As the thickness of silicon wafers continues to decrease, practical application scenarios require effective activation of dopant ions at different depths from 0 to 30 μm, which makes silicon-based surface annealing only relying on traditional furnace tubes unable to meet customer needs

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  • A kind of igbt silicon wafer back annealing method and laser annealing system
  • A kind of igbt silicon wafer back annealing method and laser annealing system
  • A kind of igbt silicon wafer back annealing method and laser annealing system

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Embodiment Construction

[0037] The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, but the present invention is not limited to the following embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.

[0038] Please refer to figure 2 , figure 2 Shown is a flow chart of the back annealing method of the IGBT silicon wafer in a preferred embodiment of the present invention. The present invention proposes a kind of back annealing method of IGBT silicon chip, comprises the following steps:

[0039] Step S100: completing the front process of the IGBT silicon wafer;

[0040] Step S200: performing a thinning process on the back of the silicon wafer, and grindi...

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Abstract

The invention proposes a back surface annealing method and laser annealing system of an insulated gate bipolar transistor (IGBT) silicon wafer. The method comprises the following steps of completing a front surface process of the IGBT silicon wafer; performing a thinning process on a back surface of the silicon wafer, and grinding the back surface to a required thickness; performing ion injection on the silicon wafer; annealing the back surface of the silicon wafer; and performing metal processing on the back surface of the silicon wafer. The back surface annealing method and laser annealing system of the IGBT silicon wafer, proposed by the invention, is applicable to a research node of a back surface annealing process of an IGBT, the pre-heating functions of different laser combinations are promoted, the back surface annealing method is used for conforming to the demand of a special IGBT back surface multi-layer annealing process, a set of laser annealing system solution scheme is provided and substitutes a high-power excimer laser annealing, proton irradiation and low-temperature furnace tube annealing process, and the customized demands of different junction depths are satisfied.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing technology, and in particular to an IGBT silicon wafer back annealing method and a laser annealing system. Background technique [0002] IGBT (Insulated Gate Bipolar Transistor), Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with MOSFET The advantages of high input impedance and low conduction voltage drop of GTR. The saturation voltage of GTR is low, the carrying current density is large, but the driving current is large; the driving power of MOSFET is small, the switching speed is fast, but the conduction voltage drop is large, and the current carrying density is small. The IGBT combines the advantages of the above two devices, with low driving power and low saturation voltage. It is very suitable for the conversion system wit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/324H01L29/739H01L21/67
CPCH01L21/324H01L21/67115H01L29/7393
Inventor 周炯
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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