A magnetoresistance element suitable for working at high temperature

Abstract

The invention provides a magnetoresistance element suitable for working at high temperature, including a reference layer, a memory layer and a tunnel barrier layer, the magnetization direction of the reference layer is constant and the magnetic anisotropy is perpendicular to the layer surface; the The magnetization direction of the memory layer is variable and the magnetic anisotropy is perpendicular to the layer surface; the tunnel barrier layer is located between the reference layer and the memory layer and is respectively adjacent to the reference layer and the memory layer; The memory layer includes a first magnetic material layer, a second magnetic material layer and a non-magnetic coupling layer, and the non-magnetic coupling layer is located between the first magnetic material layer and the second magnetic material layer for The magnetization direction coupling of the first magnetic material layer and the second magnetic material layer are consistent. The design of the magnetoresistance element provided by the present invention can improve the magnetic performance of the memory layer magnetic material under high temperature conditions under the premise of taking into account high magnetoresistance ratio, high perpendicular anisotropy and low magnetic resonance damping.

Description

technical field [0001] The invention relates to the memory field of integrated circuit chips, in particular to a magnetoresistance element suitable for working at high temperature. Background technique [0002] With the continuous progress of material science, a new type of high-performance memory - Magnetic Random Access Memory (MRAM, Magnetic Random Access Memory) is attracting people's attention. It has the high-speed read and write capabilities of static random access memory (SRAM), and the high integration of dynamic random access memory (DRAM), and can be rewritten almost infinitely. This high-speed memory has been regarded as the successor of DRAM and even flash memory. [0003] Magnetic Tunneling Junction (MTJ, Magnetic Tunneling Junction), as a data memory unit, is a key link in realizing an MRAM memory chip. The magnetic tunnel junction is a sandwich structure composed of an insulator and a magnetic material. The insulating layer in the middle separates two layer...

AI Technical Summary

Problems solved by technology

At 100°C, the magnetization of the memory layer weakens by 10%, and at 150°C, the magnetization of the memory layer weakens by 20%, which will have a great impact on the data fidelity performance at high temperatures, and limit the potential market of MRAM (commercial grade 85°C , industrial grade 125℃, automotive industry grade 150℃)

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