Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Fabrication method of threshold voltage controllable gan-based enhanced device based on real-time monitoring of open gate structure parameters

A threshold voltage, real-time monitoring technology, applied in semiconductor/solid-state device manufacturing, electrical components, semiconductor devices, etc., can solve the problems of unable to manufacture HEMT devices, stay, unable to predict the threshold voltage range, etc., to achieve high operability and repeatability, repair damage, suppress negative drift

Active Publication Date: 2019-10-08
XIDIAN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Looking at the preparation of GaN-based HEMTs at home and abroad in recent years, although enhanced devices have been realized, they all remain at the preparation level. Only after the device is prepared can the value of the threshold voltage be measured, so it is impossible to predict the threshold voltage. range, and it is impossible to manufacture HEMT devices with specific threshold voltage values

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Fabrication method of threshold voltage controllable gan-based enhanced device based on real-time monitoring of open gate structure parameters
  • Fabrication method of threshold voltage controllable gan-based enhanced device based on real-time monitoring of open gate structure parameters

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Embodiment 1, an AlGaN / GaN enhanced device with a threshold voltage of 0.2V is fabricated on a sapphire substrate.

[0039] Step 1: On the sapphire substrate, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer are sequentially grown from bottom to top by MOCVD process.

[0040](1a) Put the sapphire substrate into the MOCVD equipment, heat it up and keep it to 1050°C, then set the growth pressure of the chamber to 80Torr, the hydrogen flow rate to 5000 sccm, and the ammonia gas flow rate to 3000 sccm;

[0041] (1b) Introducing a gallium source with a flow rate of 200 sccm into the chamber, and growing a GaN buffer layer with a thickness of 650 nm on the sapphire substrate;

[0042] An aluminum source with a flow rate of 20 sccm is passed into the chamber, and an AlN insertion layer with a thickness of 1.5 nm is grown on the GaN buffer layer;

[0043] A gallium source with a flow rate of 200 sccm and an aluminum source with a flow rate...

Embodiment 2

[0133] Embodiment 2, an AlGaN / GaN enhanced device with a threshold voltage of 0.5V is manufactured on a silicon carbide substrate.

[0134] Step 1: On the silicon carbide substrate, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer, and a GaN cap layer are sequentially grown from bottom to top by using an MOCVD process.

[0135] (1.1) Put the silicon carbide substrate into the MOCVD equipment, heat it up and keep it at 1000°C, then set the growth pressure of the chamber to 50Torr, the hydrogen flow rate to 4000 sccm, and the ammonia gas flow rate to 2000 sccm;

[0136] (1.2) Introduce a gallium source with a flow rate of 200 sccm into the chamber, and grow a GaN buffer layer with a thickness of 600 nm on the silicon carbide substrate;

[0137] An aluminum source with a flow rate of 20 sccm is passed into the chamber, and an AlN insertion layer with a thickness of 1 nm is grown on the GaN buffer layer;

[0138] A gallium source with a flow rate of 200 sccm and...

Embodiment 3

[0177] Embodiment 3, an AlGaN / GaN enhanced device with a threshold voltage of 0.8V is manufactured on a silicon substrate.

[0178] In step A, on the silicon substrate, a GaN buffer layer, an AlN insertion layer, an AlGaN barrier layer and a GaN cap layer are sequentially grown from bottom to top by MOCVD process.

[0179] (A1) Put the silicon substrate into the MOCVD equipment, heat it up and keep it at 1100°C, then set the growth pressure of the chamber to 60Torr, the hydrogen flow rate to 6000 sccm, and the ammonia gas flow rate to 4000 sccm;

[0180] (A2) Introducing a gallium source with a flow rate of 200 sccm into the chamber, and growing a GaN buffer layer with a thickness of 800 nm on the silicon substrate;

[0181] An aluminum source with a flow rate of 20 sccm is passed into the chamber, and an AlN insertion layer with a thickness of 2 nm is grown on the GaN buffer layer;

[0182] A gallium source with a flow rate of 200 sccm and an aluminum source with a flow rate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for manufacturing a threshold voltage controllable GaN-based enhanced device based on a real-time monitoring open gate structure parameter, which mainly solves the problem that the threshold voltage cannot be accurately controlled in the prior art. The method comprises the steps of: growing a GaN buffer layer, an AlN insert layer, an AlGaN barrier layer and a GaN cap layer on a substrate in sequence from bottom to top; manufacturing source and drain electrodes on the GaN cap layer; calculating the remaining thickness of the barrier layer and the on-resistance of an open gate structure according to the design requirement of the threshold voltage; according to the calculated theoretical values, making a groove of the corresponding depth in the AlGaN barrier layer between the source and drain electrodes; performing quick thermal annealing on the sample in an N2 atmosphere; manufacturing a gate electrode above the groove; and manufacturing a metal connector above the source and drain electrodes, thus completing the manufacturing of the device. The method can be used for manufacturing a device having specific threshold voltage according to actual needs, and the device can be applied to an integrated circuit having high frequency and high power.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, specifically a method for preparing a GaN-based enhanced device with a controllable threshold voltage by monitoring various parameters of an open gate structure in real time, which can be used in high-frequency and high-power integrated circuits, Such as microwave power amplifiers and high temperature digital circuits. Background technique [0002] The third-generation wide-bandgap semiconductors represented by GaN and SiC have the advantages of large bandgap, high electron mobility, high saturation velocity, strong breakdown field, high thermal conductivity, and good radiation resistance. research hotspot. GaN-based high electron mobility transistor HEMTs are increasingly used in the design of high-frequency, high-temperature, and high-power microwave circuits, such as active phased array radar, mobile communications, and smart grids. [0003] Due to the strong spontaneous polari...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/66H01L21/335
Inventor 马晓华侯斌季子路朱青祝杰杰杨凌郝跃
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com