Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method using one-step template method to prepare ordered ferroelectric nanodot array

A nano-dot array and template method, applied in the fields of nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve the problems of limited application prospects and harsh growth conditions, and achieve low preparation cost, simple process, excellent epitaxy and iron. electrical effect

Inactive Publication Date: 2017-10-13
SOUTH CHINA NORMAL UNIVERSITY
View PDF5 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method has limited application prospects due to harsh growth conditions

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method using one-step template method to prepare ordered ferroelectric nanodot array
  • Method using one-step template method to prepare ordered ferroelectric nanodot array
  • Method using one-step template method to prepare ordered ferroelectric nanodot array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] see figure 1 , which is a schematic diagram of the preparation process of the ordered ferroelectric nano-dot array of this embodiment. The method for preparing an ordered ferroelectric nano-dot array by the one-step template method of this embodiment comprises the following steps:

[0039] S1: Preparation of high-performance epitaxial ferroelectric thin films: Selecting 7% Nb-doped (001)-oriented SrTiO 3 (Nb:STO) single crystal substrate 10, deposited 40 nm thick BiFeO on the substrate by laser pulse deposition 3 (BFO) thin film 20; The preparation parameter of pulsed laser deposition method is as follows:

[0040] Energy (mJ / cm 3 )

Pulse frequency (Hz)

temperature(℃)

Oxygen pressure (Pa)

1

8

660

15

[0041] S2: Transfer the single-layer PS beads 30 to the surface of the ferroelectric film as a mask; specifically, drop a mixed solution of PS beads with a diameter of 500 nm and ethanol into a petri dish filled with deionized ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method using a one-step template method to prepare an ordered ferroelectric nanodot array. The method includes the steps of S1, using a pulsed laser deposition method to deposit a high-performance epitaxy ferroelectric film on a substrate; S2, transferring single-layer PS small spheres to the surface of the ferroelectric film to serve as the mask plate; S3, performing oxygen plasma etching on the substrate with the mask plate to obtain a to-be-etched sample; S4, etching the to-be-etched sample in an ion beam etching machine; S5, removing the residual mask plate to obtain the ordered ferroelectric nanodot array. The method has the advantages that the method is simple, convenient in template removing and suitable for large-scale preparation, and the prepared ferroelectric nanodot array keeps the excellent epitaxy and ferroelectric performance of the ferroelectric film.

Description

technical field [0001] The invention relates to the technical field of nano-etching, in particular to a method for preparing an ordered ferroelectric nano-dot array by a one-step template method. Background technique [0002] Due to the surface effect, quantum size effect, small size effect, quantum tunneling and macroscopic quantum tunneling effect, the ordered ferroelectric nanodot array shows novel characteristics in many aspects. Its application in functional nano-devices, especially high-density information storage and high-sensitivity sensors has attracted a lot of research interest. For metallic and semiconducting nanomaterials, the most commonly used production technique is photolithography. However, for complex materials, such as some ternary or quaternary perovskite oxides, the energy of photolithography is too low to etch their hard surfaces, so it is not suitable. For perovskite oxide materials, focused ion beam etching and self-organization growth methods are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B82B3/00B82Y40/00
CPCB82B3/0014B82Y40/00
Inventor 高兴森田国
Owner SOUTH CHINA NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products