Method for preparing graphene or quasi-graphene through plasma auxiliary ball milling

Abstract

The invention discloses a method for preparing graphene or quasi-graphene through plasma auxiliary ball milling. Graphene or quasi-graphene and grinding balls are put into a plasma auxiliary vibration ball mill device to perform plasma auxiliary ball milling, and then the graphene or quasi-graphene is obtained after ball milling is accomplished. Compared with the traditional method for preparing graphene through ball milling, the method has the advantages that plasma auxiliary ball milling ensures that compared with graphene or quasi-graphene prepared through a common ball milling method, the prepared graphene or quasi-graphene material properly keeps the overall structure of the material, and a graphene or quasi-graphene material layer is thinner.

Description

technical field [0001] The invention belongs to the field of preparation of two-dimensional nanometer materials, in particular to a method for preparing graphene or graphene-like materials by plasma-assisted ball milling. Background technique [0002] Graphene is a two-dimensional structure with a honeycomb shape and a thickness of one atomic layer, with a hexagonal lattice of six carbon atoms. The carbon atoms of graphene are connected by σ bonds with excellent mechanical properties and rigid structure, which endows two-dimensional graphene with extremely high hardness and strength. The Young's modulus is 1100GPa, and the mechanical strength is 1060GPa; sp 2 Hybridization, each carbon atom has a p-electron that can move freely in the crystal at a speed of up to 1 / 300 of the speed of light, endowing graphene with excellent conductivity. At room temperature, its conductivity is as high as 15000cm 2 / V·s, while the resistivity is less than 10 -6 Ω cm; the single atomic laye...

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Problems solved by technology

[0003] Several main synthetic methods of graphene mainly contain at present: (1) mechanical exfoliation method: the preparation process of this method is simple, and cost is low, and sample quality is high, but its size is difficult to control, and the graphene of sufficient length cannot be grown , not suitable for large-scale preparation; (2) epitaxial method: the thickness of graphene flakes obtained by this method is not uniform; (3) epitaxial growth method: this method can prepare graphite with a thickness of 1-2 carbon atomic layers Graphene, but it is difficult to obtain products with uniform thickness; (4) Redox method: This method is low in cost, efficient and environmentally friendly, and is suitable for large-scale industrial production, but it is easy to cause defects in the physical and chemical properties of graphene; (5) Chemical vapor deposition method : This method is easier to control the size and structure of materials on a large scale, but the process is complicated and the cost is high

The above-mentioned main preparation methods of graphene have their own advantages and disadvantages. Generally speaking, it is still impossible to achieve large-scale and high-quality industrial production of graphene to meet the current market demand.

Graphene-like materials, like graphene, usually require some methods of ultrasonic exfoliation or chemical meteorological growth during preparation. In this process, it is also difficult to control, consumes a lot of energy, and has many defects.

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