Etching solution for copper-molybdenum alloy film

Abstract

The invention relates to an etching solution for a copper-molybdenum alloy film. The pH value of the etching solution is 1-2. The etching solution comprises, by mass, 1%-5% of hydrogen peroxide, 0.1%-10% of inorganic acid, 0.5%-10% of sulfate, 0.5%-15% of inorganic ammonia salt buffering agents, 0.01%-10% of alcohol amine pH modifiers, 0.1%-10% of hydrogen peroxide stabilizers, 0.1%-5% of metal ion chelating agents, 0.01%-5% of metal inhibiters, and the balance deionized water. According to the etching solution for the copper-molybdenum alloy film, a small quantity of hydrogen peroxide is added and assisted with the metal inhibiters and inorganic acid, and the substances such as the sulfate and the inorganic ammonia salt buffering agents are added, so that the change of the pH value of an etching solution system is kept within +0.3 all the time in the etching process; the stability of the pH value of the etching solution system in the etching process can be kept, and nonuniform etching caused by an excessively-low pH value can be avoided; and in the process that the content of copper ions changes from 0 ppm to 1000 ppm, the etching speed is not changed, the etching CD and the slope angle are basically unchanged, etching residues are avoided, and the requirement of customers for high-precision machining is met.

Description

technical field [0001] The invention relates to the field of metal etching solutions, in particular to an etching solution for copper-molybdenum alloy metal films. Background technique [0002] In the current high-generation liquid crystal panel production process, the size of the panel is enlarged, and copper alloy is used for the grid and metal wiring. Compared with the previous aluminum alloy, the resistance is lower and there is no environmental problem. However, the adhesion between copper and glass substrates and insulating films is low, and titanium, molybdenum, etc. are usually used as the lower film metal, so an etching solution for copper-molybdenum alloy film is required, and the structure of the etching film layer is a copper / molybdenum alloy. In the process of etching copper-molybdenum alloys, molybdenum is generally more difficult to etch than copper, and the etching rate is much lower than that of copper. The existing copper-molybdenum alloy etchant usually a...

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Problems solved by technology

Publication Nos. CN103890232A, CN103668208A, CN101684557A, CN102703902A and other Chinese patents disclose copper-molybdenum alloy etching solutions, almost all of which are added with 0.01% to 5% mass fraction of fluoride to increase the etching speed of molybdenum alloys, reduce the length of the tail, and remove the Molybdenum alloy residues produced during etching, but the addition of fluoride has the following disadvantages: first, the ionization of fluoride to produce fluorine ions will cause great environmental pollution, and the cost of etching waste liquid treatment is high; High risk; Third, fluoride ions are highly corrosive and will etch glass substrates

When the content of hydrogen peroxide in the etching solution of this system is less than or equal to 5%, there will be residues, and the content of hydrogen peroxide needs to be increased to more than 10%. However, when the content of hydrogen peroxide is large, hydrogen peroxide is unstable. As the content of metal ions rises, hydrogen peroxide is rapidly decomposed and a large amount of heat is released, resulting in uneven etching, which may cause explosions, casualties and property losses of the company; silicon spot

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