Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasmon random laser array device based on two-dimensional material

A two-dimensional material and random laser technology, which is applied to laser components, lasers, laser devices, etc., can solve the problems of high laser threshold and non-tunable directionality

Active Publication Date: 2017-08-18
SOUTHEAST UNIV
View PDF6 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Technical problem: The purpose of this invention is to solve the bottleneck problems of existing random lasers such as high laser threshold, radiation spectrum, and non-tunable directivity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasmon random laser array device based on two-dimensional material
  • Plasmon random laser array device based on two-dimensional material
  • Plasmon random laser array device based on two-dimensional material

Examples

Experimental program
Comparison scheme
Effect test

example

[0033] 1. If figure 1 The M×N laser array structure is prepared as shown, the transparent electrode is prepared on the substrate by photolithography, etching and other processes, and then the dielectric layer is prepared by ALD on the top, and the low surface stress polymer dielectric layer is prepared by the spin coating process . Then, an M×N grid layer is prepared by nanoimprinting technology to form an array chamber structure, and the hydrophilic material is generally a hydrophilic polymer material such as polyethylene glycol or polyacrylamide. After the overall structure of the device is prepared, metal nanoparticles and two-dimensional material nanosheets are added to the first solvent or the second solvent, and then the first solvent and the second solvent are filled into the laser chamber and passed through the photoresist. seal.

[0034] 2. Connect the prepared random laser array to the peripheral drive circuit through the bottom electrode and the top electrode, and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a plasmon random laser array device based on a two-dimensional material. The plasmon random laser array device consists of an array of laser chamber units; the integral structure of the random laser array device comprises a pumping light source (1), a substrate (2), bottom electrodes (31), a medium layer (4), laser chamber units (6) enclosed by spacing layers (5) and a top electrode (32) which are successively arranged from the bottom to the top; two ends of a periphery driving circuit (7) are respectively connected to the bottom electrodes (31) and the top electrode (32); the bottom electrode (31), the medium layer (4), the laser chamber units (6) and the top electrode (32) form a closed circuit. The random laser array uses the two-dimensional material nanometer sheet which has high photoluminescence efficiency as a random gain medium, can effectively enhance light scattering through the localized surface plasmon resonance (LSPR) of metal nanometer particles and can reduce the threshold of the laser. Besides, the Plasmon random laser array device can perform dynamic regulation on a radiation spectrum and directivity through changing working voltage of the laser chamber.

Description

technical field [0001] The invention belongs to the fields of laser technology, two-dimensional materials, metal nanomaterials and micro-opto-electromechanical technology, and in particular relates to a plasmon random laser array device based on two-dimensional materials. Background technique [0002] Random laser is a new type of laser that does not require a resonant cavity. Compared with traditional lasers, it does not require a resonant cavity. The laser is formed by the multiple scattering effect in the random gain medium contained in it. The random gain medium can absorb light Achieve effective scattering and amplification. For random lasers, it is usually necessary to introduce a new nano-light source technology, using various nanostructures to enhance the interaction between light and matter. The scattering characteristics of the random gain medium are further enhanced, thereby reducing the threshold of the random laser and improving the energy consumption of the ra...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/23H01S3/30
CPCH01S3/23H01S3/307
Inventor 张彤李丰张晓阳熊梦
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products