Method for preparing submicron order crack-free ferrite film through step-by-step annealing technology

A ferrite thin film, sub-micron technology, applied in cathode sputtering applications, magnetic film to substrate applications, inductor/transformer/magnet manufacturing, etc., can solve problems such as cracking, reduce residual stress, and increase thickness. Effect

Inactive Publication Date: 2017-08-08
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the traditional annealing process (first rising from room temperature to a higher temperature at a certain rate, then keeping it at this temperature for a period of time, then dropping to a lower temperature at a certain rate, and finally cooling down naturally), Cracks are prone to occur when the film reaches a certain thickness, and only crack-free ferrite films less than 100nm can be prepared

Method used

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  • Method for preparing submicron order crack-free ferrite film through step-by-step annealing technology
  • Method for preparing submicron order crack-free ferrite film through step-by-step annealing technology
  • Method for preparing submicron order crack-free ferrite film through step-by-step annealing technology

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Effect test

Embodiment 1

[0024] Step 1: Clean the surface of the substrate

[0025] Using single crystal silicon Si as the substrate, the thickness of the substrate is 500 μm, and the cleaning process is as follows:

[0026] (1) Ultrasonic cleaning with acetone for 10 to 12 minutes;

[0027] (2) Ultrasonic cleaning with absolute ethanol for 10 to 12 minutes;

[0028] (3) Ultrasonic cleaning with deionized water for 10 to 12 minutes;

[0029] (4) Dry the surface of the substrate with a nitrogen blow gun.

[0030] Step 2: Depositing thin films by RF magnetron sputtering

[0031] First the target (composition is Y 3 Fe 5 o 12 , target diameter is 70mm, thickness is 4mm) fixed on the target platform, and then the cleaned Si substrate is fixed on the abutment in the chamber, and the substrate is blocked by the baffle in the chamber, and the vacuum chamber is closed. Turn on the mechanical pump and the molecular pump in turn to draw vacuum until the background vacuum is lower than 3.0×10 -4 Pa. Tur...

Embodiment 2

[0037] Step 1: Clean the surface of the substrate

[0038] Using single crystal silicon Si as the substrate, the thickness of the substrate is 500 μm, and the cleaning process is as follows:

[0039] (1) Ultrasonic cleaning with acetone for 10 to 12 minutes;

[0040] (2) Ultrasonic cleaning with absolute ethanol for 10 to 12 minutes;

[0041] (3) Ultrasonic cleaning with deionized water for 10 to 12 minutes;

[0042] (4) Dry the surface of the substrate with a nitrogen blow gun.

[0043] Step 2: Depositing thin films by RF magnetron sputtering

[0044] First the target (composition is Y 3 Fe 5 o 12 , target diameter is 70mm, thickness is 4mm) fixed on the target platform, and then the cleaned Si substrate is fixed on the abutment in the chamber, and the substrate is blocked by the baffle in the chamber, and the vacuum chamber is closed. Turn on the mechanical pump and the molecular pump in turn to draw vacuum until the background vacuum is lower than 3.0×10 -4 Pa. Tur...

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Abstract

The invention discloses a method for preparing a submicron order crack-free ferrite film through a step-by-step annealing technology. A microwave ferrite material is related to the method, the vacuum sputtering deposition technology is utilized, and the ferrite film is deposited on a single-crystal substrate. Due to the fact that the heat expansion coefficients and the lattice constants of the single-chip substrate and the ferrite film are not matched, residual stress can be generated by the film in the crystallizing process, and when the residual stress exceeds a certain value, the cracking phenomenon of the film can happen. However, the residual stress can be effectively released through the step-by-step annealing method, film cracks are prevented, and the thickness of the crack-free film is finally increased. By means of the method, the preparing process is simple, the production cost is low, the prepared film has high compactness, and cracking is not likely to happen.

Description

technical field [0001] The invention relates to the field of microwave devices, in particular to a method for preparing a submicron crack-free ferrite film by using a step-by-step annealing technique. Background technique [0002] Yttrium iron garnet (Y 3 Fe 5 o 12 , YIG) as a representative garnet-type ferrite material, is widely used in rings due to its good gyromagnetic effect, narrow ferromagnetic resonance linewidth, and low high-frequency loss. In microwave communication devices such as devices, isolators, and phase shifters. With the development of microwave ferrite devices towards miniaturization and integration, it is of great significance to prepare YIG thin films that meet the device requirements. According to research, the performance of microwave devices based on ferrite films is closely related to the film thickness. Only when the film reaches a certain thickness without cracking can it be used to prepare microwave devices such as circulators. However, in...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/58C23C14/35C23C14/08H01F41/18
CPCC23C14/5806C23C14/08C23C14/35H01F41/186
Inventor 郑辉李康复郑鹏郑梁
Owner HANGZHOU DIANZI UNIV
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