Titanium-doped high-quality silicon oxide film and preparation method therefor

A silicon oxide, high-quality technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as the electrical performance and stability of silicon-based devices that cannot be effectively met, and achieve the effect of reducing the formation of charges

Inactive Publication Date: 2017-06-20
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Based on the above reasons, plasma implantation of Al, Cr, O, and Si cannot effectively meet the requirements for the electrical properties and stability of silicon-based devices.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Titanium-doped high-quality silicon oxide film and preparation method therefor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Select p-type silicon with a crystal orientation of and a resistivity of 10 Ω.cm;

[0025] (2) Use pure oxygen as a protective atmosphere, and use wet oxygen oxidation process to grow SiO on the surface of the silicon wafer described in step (1). 2 Thin film, the thermal oxidation temperature used is 900 °C, and the silicon oxide thickness obtained is 30 nm;

[0026] (3) growing a 10 nm thick titanium film on the silicon oxide surface described in step (2);

[0027] (4) Using argon as a protective atmosphere, subject the silicon wafer described in step (3) to subsequent annealing at 850 °C.

[0028] The subsequent annealing process described in step (4) is aimed at two aspects: on the one hand, through high-temperature annealing under argon gas, the concentration of oxygen vacancies is reduced, and the electrical properties of silicon-based devices and their stability in harsh environments are improved. On the other hand, high-temperature annealing makes titanium...

Embodiment 2

[0030] (1) Select n-type silicon with a crystal orientation of and a resistivity of 50 Ω.cm;

[0031] (2) Use pure oxygen as a protective atmosphere, and use wet oxygen oxidation process to grow SiO on the surface of the silicon wafer described in step (1). 2 Thin film, the thermal oxidation temperature used is 1250 °C, and the obtained silicon oxide thickness is 300 nm;

[0032] (3) growing a 50 nm thick titanium film on the silicon oxide surface described in step (2);

[0033] (4) Using argon as a protective atmosphere, subject the silicon wafer described in step (3) to subsequent annealing at 1150 °C.

Embodiment 3

[0035] (1) Select p-type silicon with a crystal orientation of and a resistivity of 0.1 Ω.cm;

[0036] (2) Use pure oxygen as a protective atmosphere, and use wet oxygen oxidation process to grow SiO on the surface of the silicon wafer described in step (1). 2 Thin film, the thermal oxidation temperature used is 1250 °C, and the obtained silicon oxide thickness is 300 nm;

[0037] (3) growing a 50 nm thick titanium film on the silicon oxide surface described in step (2);

[0038](4) Using argon as a protective atmosphere, subject the silicon wafer described in step (3) to subsequent annealing at 1150 °C.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a titanium-doped high-quality silicon oxide film and a preparation method therefor. A related device includes but is not limited to an MOS device and a bipolar transistor. Through the adding of titanium impurity to gate oxide or buried oxide, the combination between oxygen vacancy and hydrogen impurity can be weakened, and the inhibition of the release of protons follows. Finally, the forming of charges at a SiO2 / Si interface state and in SiO2 is inhibited at the same time. Titanium-doped silicon oxide serves as the gate oxide or buried oxide, so the film can iron out the defects that the conventional Al, Cr, O and Si doping just can inhibit the forming of charges in the SiO2 but cannot remarkably reduce the SiO2 / Si interface state, thereby remarkably improving the electrical performance of MOS and BJT and other silicon-base devices and the stability in a severe environment.

Description

technical field [0001] The invention belongs to the field of component preparation, and in particular relates to a titanium-doped high-quality silicon oxide film and a preparation method thereof. Background technique [0002] Silicon oxide (SiO 2 ) is often used as gate oxide or buried oxide and is widely used in integrated circuits. However, in actual use, it is often found that SiO 2 There is a charge in the SiO 2 The interface state is formed on the / Si interface. Specifically, under the action of an electric field or a laser, carriers will be injected into silicon oxide. Under forward bias, the injected electrons drift from the oxide layer to the gate; the remaining holes will move in the SiO at a slower speed under the action of the electric field. 2 mid-migration. When holes reach Si / SiO 2 near the interface near SiO 2 On one side, it is trapped by oxygen vacancy traps and becomes a positive space charge. In addition, a part of the oxygen vacancies that have c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/12H01L21/02
CPCH01L29/12H01L21/02107
Inventor 董鹏宋宇代刚冯晓龙李沫张健
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap