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Silicon monoxide nano material and preparation method thereof

A nanomaterial, silicon monoxide technology, applied in the field of silicon oxide, can solve the environmental pollution of silicon crushed debris and other problems, and achieve the effects of reducing sintering and agglomeration, low production cost and high activity

Inactive Publication Date: 2017-05-31
TIANJIN HUILI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The present invention provides silicon monoxide nanomaterials and its preparation method to solve the technical problems existing in the known technology, which greatly reduces the preparation cost of high-purity silicon monoxide, and at the same time solves the problem of environmental pollution caused by silicon crushed debris

Method used

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  • Silicon monoxide nano material and preparation method thereof

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preparation example Construction

[0035] The preparation method of above-mentioned silicon monoxide nanometer material, comprises the steps:

[0036] (1) The diamond wire-cut silicon powder, millimeter-sized polysilicon powder and silicon oxide compound are uniformly mixed in proportion by wet or dry method, wherein the wet-mixed mixture must be dried to remove water.

[0037] (2) Put the above-mentioned dry mixture into a crucible, cover the mixture evenly with a layer of millimeter-sized polysilicon powder, and send it to a vacuum furnace.

[0038] (3) Turn on the vacuum pump, raise the temperature to 400-700°C, keep the negative pressure for a certain period of time, control the vacuum degree to 500pa-1000pa, remove the residual moisture and organic impurities in the material, and avoid the existence of impurities from affecting the purity of the product, so as to improve product quality.

[0039] (4) Turn on the argon gas preheating heater, open the argon gas tank, pass argon gas into the vacuum furnace, ...

Embodiment 1

[0050]Take 120 parts of diamond wire-cut silicon powder and 30 parts of millimeter-sized polysilicon powder, mix them evenly by dry method, put the dry mixture into a crucible with a porous ceramic filter at the bottom, keep the materials loose, and cover the mixture evenly with a layer Millimeter polysilicon powder with a thickness of 20mm is sent to the vacuum furnace; turn on the vacuum pump, heat up to 400-700°C, and the pressure is -900-20KPa, the holding time is 0.5-1.5 hours, and the vacuum degree is controlled at 500pa-1000pa. Residual moisture and organic impurities in the material; turn on the argon preheating heater, open the argon tank, and feed argon into the vacuum furnace. The argon is fed through the porous ceramic filter at the bottom of the mixture to maintain the above pressure and vacuum ℃, heat up the vacuum furnace quickly and maintain the temperature at 1300-1400°C, adjust the valve of the argon tank during the heating process, control the argon flow rate...

Embodiment 2

[0052] Take 90 parts of diamond wire-cut silicon powder, 20 parts of millimeter-sized polycrystalline silicon powder, and 50 parts of silicon oxide compound, mix them in high-purity water, stir at a high speed of 800-2000rpm / min for 0.5-1.5 hours, and use a diaphragm for the mixed slurry The filter press removes water to form a filter cake, and the filter cake is dried by a scraper film dryer to form a uniform dry mixture; the dry mixture is placed in a crucible with a porous ceramic filter at the bottom to keep the material loose. The top of the material is evenly covered with a layer of millimeter-scale polysilicon powder with a thickness of 20mm, and sent to the vacuum furnace; turn on the vacuum pump, heat up to 400-700°C, and the pressure is -900-20KPa, the holding time is 0.5-1.5 hours, and the vacuum is controlled. The temperature is 500pa-1000pa to remove the residual moisture and organic impurities in the material; turn on the argon preheating heater, open the argon ta...

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Abstract

The invention discloses a silicon monoxide nano material and a preparation method thereof. The material provided by the invention is prepared from the following raw materials in parts by weight: 90 to 120 parts of diamond wire cut silicon powder, 20 to 30 parts of millimeter-sized polycrystalline silicon powder and 0 to 90 parts of silicon-oxygen compound. The method provided by the invention comprises the following steps of uniformly mixing the raw materials according to a proportion through a wet method or a dry method, putting a dry mixed material into a crucible, uniformly covering the mixed material with a layer of the millimeter-sized polycrystalline silicon powder, and sending an obtained mixture into a vacuum furnace; starting a vacuum pump, raising a temperature to 400 to 700 DEG C, carrying out heat preservation for a certain time under negative pressure, and controlling a vacuum degree to be 500pa to 1,000pa; starting an argon tank, maintaining the negative pressure and the vacuum degree, quickly raising the temperature, maintaining the temperature at 1,300 to 1,400 DEG C, controlling an argon flow rate to be 0.5L / min to 10L / min, starting a condensation collecting tank, and keeping the temperature at 100 to 200 DEG C; decreasing the temperature after the reaction is finished, closing a vacuum, and when the vacuum degrees of the vacuum furnace and the condensation collecting tank reach normal pressure, closing the argon tank, so as to obtain the silicon monoxide nano material, wherein a particle size is 30nm to 100nm.

Description

technical field [0001] The invention belongs to the technical field of silicon oxide, and in particular relates to a silicon monoxide nanometer material and a preparation method thereof. Background technique [0002] In the photovoltaic industry chain, 40% to 50% of silicon raw materials are cut into silicon crushed chips, and the total amount reaches tens of thousands of tons per year. With the continuous innovation of technology, the mainstream direction of silicon wafer cutting is diamond wire cutting. The particle size of silicon powder cut by this method is small, which belongs to the submicron range and has very high activity. Since the surface is oxidized during cutting and post-processing, and the powder contains other impurities such as diamonds, metal objects, and resin powder, there is no direction for higher added value in the reuse of silicon powder. [0003] The cutting silicon powder in the photovoltaic industry has small particle size, high activity, and hig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/113B82Y40/00
CPCC01B33/113C01P2004/03C01P2004/64
Inventor 朱伟杰杨振东杨涛陈忠杰孙彦辉
Owner TIANJIN HUILI TECH CO LTD
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