Stacked gate dielectric GaN-based insulated gate high-electron mobility transistor and manufacturing method

Abstract

The invention discloses a stacked gate dielectric GaN-based insulated gate high-electron mobility transistor, mainly to solve the problem that existing similar devices are low in reliability. The device comprises a substrate (1), an AlN nucleation layer (2), a GaN buffer layer (3), an AlN insertion layer (4), an AlGaN barrier layer (5), a GaN cap layer (6), a SiN passivation layer (7), a gate dielectric layer (8) and a SiN protection layer (9) from bottom to top, wherein two ends of the GaN buffer layer (3) are provided with a source electrode (10) and a drain electrode (11); the middle of the gate dielectric layer (8) is provided with a gate electrode (12); a metal interconnection layer (13) is arranged on the source electrode (10) and the drain electrode (11); and the gate dielectric layer (8) adopts a stacked structure formed by an AlN dielectric insertion layer (81) and a high k dielectric layer (82). The interface characteristics and the gate control capability of the device are improved, the reliability is improved, and the stacked gate dielectric GaN-based insulated gate high-electron mobility transistor can serve as a high-efficiency microwave power device.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, in particular to a high-electron mobility transistor, which can be used to make high-frequency high-power modules. Background technique [0002] Nitride semiconductor materials GaN, AlN, InN and their alloys are the third-generation wide-bandgap semiconductor materials after the first-generation elemental semiconductor materials Si, Ge and the second-generation compound semiconductor materials GaAs, InP, etc., which have a direct bandgap , Wide bandgap width, large continuous adjustable range, high breakdown field strength, fast saturated electron drift speed, high thermal conductivity, and good radiation resistance. With the improvement of technology and social development, the first and second generation semiconductor materials cannot meet the needs of higher frequency and higher power electronic devices. Electronic devices based on nitride semiconductor materials can meet this re...

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Problems solved by technology

However, the surface of nitride materials is very easily oxidized, forming unstable oxygen substitution nitrogen defects in the wurtzite nitride lattice

During the fabrication of insulated gate HEMT devices and the deposition of gate oxide dielectrics, the establishment of a low-quality interface oxide layer causes a high-density interface charge between the gate dielectric layer and the nitride barrier layer, and the charge / discharge effect of the interface state will cause serious threshold Reliability issues such as voltage instability, energy band modulation of interface charges and scattering of remote ionized impurities will cause device performance degradation such as threshold voltage negative drift, channel carrier mobility and transconductance reduction

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