Fluidized bed chemical vapor deposition preparation method of silicon carbide nanoparticle

Abstract

The invention relates to a fluidized bed chemical vapor deposition preparation method of silicon carbide nanoparticles. The fluidized bed chemical vapor deposition preparation method comprises the following steps: by using a fluidized bed chemical vapor deposition method, heating a precursor material hexamethyl disilane to generate vapor, and feeding the vapor into a fluidized bed reactor in a gas carrying manner; implementing pyrolytic reaction on the precursor vapor in a high-temperature zone so as to form silicon carbide nanoparticles; conveying the nanoparticles to the upper part of the fluidized bed reactor under the action of a fluidization gas, sucking out by using a negative-pressure device, and collecting so as to obtain silicon carbide nano powder; in the presence of an inert atmosphere, implementing high-temperature thermal treatment, thereby obtaining well-crystallized silicon carbide nanoparticles. The silicon carbide nanoparticles are cubic-phase silicon carbide, are sphere-shaped and are narrow in particle size distribution, and the sizes of the particles are 5-300 nanometers and are adjustable. By adjusting the reaction atmosphere, particles of pure silicon carbide and silicon-enriched or carbon-enriched silicon carbide can be prepared. The fluidized bed chemical vapor deposition preparation method is simple in process procedure, convenient and rapid in process operation, low in cost and beneficial to industrial production.

Description

technical field [0001] The invention relates to the technical field of silicon carbide material preparation, in particular to a method for preparing silicon carbide nanoparticles by fluidized bed chemical vapor deposition. Background technique [0002] Silicon carbide is widely used as high-temperature structural components and new sub-components due to its wide electronic band gap, excellent high-temperature mechanical properties, low thermal expansion coefficient, high thermal conductivity, and radiation resistance, corrosion resistance, and oxidation resistance. In aerospace, chemical, energy, electronics and other fields. By reducing the particle size of SiC nanomaterials to the nanoscale, due to the size effect, SiC materials will exhibit many novel properties different from those of bulk materials, further broadening their application fields. Silicon carbide particles with nano-size also show excellent high-temperature sintering performance, overcome the difficulty of...

AI Technical Summary

Problems solved by technology

Using these methods to synthesize silicon carbide nanoparticles, on the one hand, it is relatively difficult to control the morphology and size of the reaction product, and it is even more challenging to prepare monodisperse silicon carbide nanoparticles with good sphericity, narrow particle size distribution, and adjustable size; On the one hand, the obtained SiC nanoparticles often contain other elemental impurities, and the stoichiometric ratio of SiC cannot be effectively controlled by design.

In addition, some methods require high energy input, which puts high demands on equipment, and cannot achieve mass continuous production of products

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